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Nat Mater. 2006 Aug;5(8):605-13.

A bright future for organic field-effect transistors.

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Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN) via P. Gobetti 101, 40129 Bologna, Italy.


Field-effect transistors are emerging as useful device structures for efficient light generation from a variety of materials, including inorganic semiconductors, carbon nanotubes and organic thin films. In particular, organic light-emitting field-effect transistors are a new class of electro-optical devices that could provide a novel architecture to address open questions concerning charge-carrier recombination and light emission in organic materials. These devices have potential applications in optical communication systems, advanced display technology, solid-state lighting and electrically pumped organic lasers. Here, recent advances and future prospects of light-emitting field-effect transistors are explored, with particular emphasis on organic semiconductors and the role played by the material properties, device features and the active layer structure in determining the device performances.

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