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Nano Lett. 2006 Mar;6(3):351-4.

Circuit fabrication at 17 nm half-pitch by nanoimprint lithography.

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  • 1Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA.

Abstract

High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a 300-layer GaAs/AlGaAs superlattice was employed to produce an array of 150 Si nanowires (15 nm wide at 34 nm pitch) as an imprinting mold. A successful reproduction of the Si nanowire pattern was demonstrated. Furthermore, a cross-bar platinum nanowire array with a cell density of approximately 100 Gbit/cm(2) was fabricated by two consecutive imprinting processes.

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