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Nano Lett. 2006 Feb;6(2):205-8.

Mobility in semiconducting carbon nanotubes at finite carrier density.

Author information

1
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. vperebe @us.ibm.cim

Abstract

Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field, for different tube diameters and temperatures. The low-field mobility is a nonmonotonic function of carrier density and varies by as much as a factor of 4 at room temperature. At low density, with increasing field the drift velocity reaches a maximum and then exhibits negative differential mobility, due to the non-parabolicity of the band structure. At a critical density, rho(c) approximately 0.35-0.5 electrons/nm, the drift velocity saturates at around one-third of the Fermi velocity. Above rho(c), the velocity increases with field strength with no apparent saturation.

PMID:
16464035
DOI:
10.1021/nl052044h
[Indexed for MEDLINE]
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