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Phys Rev Lett. 2005 Dec 16;95(25):256402. Epub 2005 Dec 13.

Spatial structure of Mn-Mn acceptor pairs in GaAs.

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1
COBRA Inter-University Research Institute, Eindhoven University of Technology, P.O. Box 513, NL-5600MB Eindhoven, The Netherlands.

Abstract

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wave function in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn delta-doped layers grown on differently oriented substrates.

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