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Phys Rev Lett. 2005 Nov 25;95(22):226601. Epub 2005 Nov 21.

Hall effect in the accumulation layers on the surface of organic semiconductors.

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1
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, USA. podzorov@physics.rutgers.edu

Abstract

We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility muH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, nH, coincides with the density n calculated using the gate-channel capacitance and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.

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