Potential variations on semiconductor surfaces are often mapped using a combination of constant current topographic and local surface photo-voltage (SPV) imaging. SPV imaging provides a direct measurement of surface-potential variations at large lateral distances from a charged defect or adsorbate. However, directly above the defect, variations in the SPV signal need to be interpreted in terms of surface screening, traps, and band bending. We have examined these effects using isolated oxygen atoms on a GaAS(110) surface, which is free of surface states. We interpret variations in the SPV signal in terms of a simple electrostatic model which considers the oxygen-induced Coulomb potential and corresponding image potential, both of which affect the surface density of states.