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Opt Lett. 2005 Aug 1;30(15):1992-4.

Active optical control of the terahertz reflectivity of high-resistivity semiconductors.

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Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic.


We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R <3%) and highly reflective (R >85%) limits by means of the intensity and wavelength of the optical illumination.


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