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Phys Rev Lett. 2004 Oct 1;93(14):146401. Epub 2004 Sep 27.

Mechanism of hopping transport in disordered mott insulators.

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Department of Physics, Kyoto University, Kyoto 606-8502, Japan.


By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca2-xSrxRuO4 near the metal-insulator transition. The hopping exponent alpha shows a systematic evolution from a value of alpha=1/2 deeper in the insulator to the conventional Mott value alpha=1/3 closer to the transition. This behavior, which we argue to be a universal feature of disordered Mott systems close to the metal-insulator transition, is shown to reflect the gradual emergence of disorder-induced localized electronic states populating the Mott-Hubbard gap.

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