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Phys Rev Lett. 2004 Aug 13;93(7):076803. Epub 2004 Aug 11.

Mobile ambipolar domain in carbon-nanotube infrared emitters.

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1
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.

Abstract

We spatially resolve the infrared light emission from ambipolar carbon-nanotube field-effect transistors with long-channel lengths. Electrons and holes are injected from opposite contacts into a single nanotube molecule. The ambipolar domain, where electron and hole currents overlap, forms a microscopic light emitter within the carbon nanotube. We can control its location by varying gate and drain voltages. At high electric fields, additional stationary spots appear due to defect-assisted Zener tunneling or impact ionization. The laterally resolved measurement provides valuable insight into the transistor behavior, complementary to electronic device characteristics.

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