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Phys Rev Lett. 2004 Apr 30;92(17):178302. Epub 2004 Apr 30.

Nonvolatile memory with multilevel switching: a basic model.

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CPHT, Ecole Polytechnique, 91128 Palaiseau Cedex, France.


There is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the assumption that the semiconducting part has a nonpercolating domain structure. We solve the model using numerical simulations and the basic carrier transfer mechanism is unveiled in detail. Our model captures three key features observed in experiments: multilevel switchability of the resistance, its memory retention, and hysteretic behavior in the current-voltage curve.

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