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Appl Opt. 2004 Feb 20;43(6):1275-80.

Depth profiling of high-energy hydrogen-implanted 6H-SiC.

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Department of Physics, University of Pretoria, Pretoria 002, South Africa.


The results of implanting silicon carbide with a 1-MeV proton beam at a dose of 1 x 10(17) cm(-2) are presented. Using high-resolution confocal Raman spectroscopy, we analyzed the depth profile of the implantation damage before and after thermal annealing. When it is applied to a high-refractive-index medium, such as SiC, this technique requires careful manipulation to ensure the correct interpretation of results. To this end we discuss a simple ray-tracking model that includes the effects of additional spherical aberration and of the Gaussian intensity profile of the excitation beam. In addition, infrared reflectance measurements show evidence of a well-defined step in the refractive-index profile at the expected implantation depth.

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