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Appl Opt. 2004 Feb 10;43(5):1082-90.

Mo/B4C/Si multilayer-coated photodiode with polarization sensitivity at an extreme-ultraviolet wavelength of 13.5 nm.

Author information

1
Universities Space Research Association, National Synchrotron Light Source, Beamline X24C, Brookhaven National Laboratory, Upton, New York 11973, USA. benjawan@bnl.gov

Abstract

A silicon photodiode coated with an interface-engineered Mo/Si multilayer was developed as a polarization sensitive detector. The Mo/B4C/Si multilayer was designed to reflect 13.5-nm extreme-ultraviolet (EUV) radiation at an incident angle of 45 degrees, at which the maximum polarization sensitivity occurs. The sensitivity of this specially coated photodiode and its polarization responses were determined by measurement of the reflectance and transmittance of the multilayer coating with synchrotron radiation. The Mo/B4C/Si multilayer was found to reflect 69.9% of the s-polarized radiation and only 2.4% of the p-polarized radiation, thus transmitting approximately 0.2% s-polarized radiation and 8.4% p-polarized radiation at a 13.5-nm wavelength and a 45 degrees angle of incidence. A polarization ratio, (Tp - Ts)/(Tp + Ts), of 95% was achieved with sufficiently high sensitivity from this photodiode. This result demonstrates the high polarization sensitivity and the usefulness of multilayer-coated photodiodes as novel EUV polarimeters.

PMID:
15008487

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