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J Am Chem Soc. 2003 Nov 12;125(45):13656-7.

High electron mobility in ladder polymer field-effect transistors.

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1
Department of Chemical Engineering, University of Washington, Seattle, Washington 98195-1750, USA.

Abstract

Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.

PMID:
14599192
DOI:
10.1021/ja0371810
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