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Science. 2003 May 23;300(5623):1269-72.

Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

Author information

1
Hosono Transparent ElectroActive Materials, Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology (JST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012, Japan. nomura@lucid.msl.titech.ac.jp

Abstract

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

PMID:
12764192
DOI:
10.1126/science.1083212
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