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Phys Rev Lett. 2002 Jun 24;88(25 Pt 1):257001. Epub 2002 Jun 5.

Doping dependence of an n-type cuprate superconductor investigated by angle-resolved photoemission spectroscopy.

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1
Department of Physics, Applied Physics and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305, USA.

Abstract

We present an angle-resolved photoemission doping dependence study of the n-type cuprate superconductor Nd(2-x)Ce(x)CuO(4+/-delta), from the half-filled Mott insulator to the T(c) = 24 K superconductor. In Nd2CuO4, we reveal the charge-transfer band for the first time. As electrons are doped into the system, this feature's intensity decreases with the concomitant formation of near- E(F) spectral weight. At low doping, the Fermi surface is an electron-pocket (with volume approximately x) centered at (pi,0). Further doping leads to the creation of a new holelike Fermi surface (volume approximately 1+x) centered at (pi,pi). These findings shed light on the Mott gap, its doping evolution, as well as the anomalous transport properties of the n-type cuprates.

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