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Phys Rev Lett. 2002 May 20;88(20):207208. Epub 2002 May 6.

Anomalous Hall effect in ferromagnetic semiconductors.

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1
Department of Physics, The University of Texas, Austin, Texas 78712, USA.

Abstract

We present a theory of the anomalous Hall effect in ferromagnetic (III, Mn)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wave function upon traversing closed paths on the spin-split Fermi surface. The quantitative agreement between our theory and experimental data in both (In, Mn)As and (Ga, Mn)As systems suggests that this disorder independent contribution to the anomalous Hall conductivity dominates in diluted magnetic semiconductors. The success of this model for (III, Mn)V materials is unprecedented in the longstanding effort to understand origins of the anomalous Hall effect in itinerant ferromagnets.

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