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Phys Rev Lett. 2002 Mar 25;88(12):126601. Epub 2002 Mar 12.

Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode.

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NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa, 243-0198 Japan.


We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.

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