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Phys Rev Lett. 2001 Dec 31;87(27 Pt 1):276801. Epub 2001 Dec 7.

Insulator at the ultrathin limit: MgO on Ag(001).

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1
Institut de Physique de la Matière Condensée, Université de Lausanne, CH-1015 Lausanne, Switzerland.

Abstract

The electronic structure and morphology of ultrathin MgO films epitaxially grown on Ag(001) were investigated using low-temperature scanning tunneling spectroscopy and scanning tunneling microscopy. Layer-resolved differential conductance (dI/dU) measurements reveal that, even at a film thickness of three monolayers, a band gap of about 6 eV is formed corresponding to that of the MgO(001) single-crystal surface. This finding is confirmed by layer-resolved calculations of the local density of states based on density functional theory.

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