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Phys Rev Lett. 2001 Dec 17;87(25):256805. Epub 2001 Dec 3.

Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

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1
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.

Abstract

Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers--the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.

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