Send to

Choose Destination
J Synchrotron Radiat. 2001 Mar 1;8(Pt 2):827-9.

X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p-GaN.

Author information

Department of Physics, Tamkang University, Tamsui, Taiwan.


X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface.


Supplemental Content

Loading ...
Support Center