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Science. 1999 May 21;284(5418):1335-7.

Large magnetoresistance of electrodeposited single-crystal bismuth thin films

Author information

1
Department of Physics and Astronomy, Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218, USA.

Abstract

Single-crystal bismuth thin films 1 to 20 micrometers thick were fabricated by electrodeposition and suitable annealing. Magnetoresistance up to 250 percent at 300 kelvin and 380,000 percent at 5 kelvin as well as clean Shubnikov-de Haas oscillations were observed, indicative of the high quality of these films. A hybrid structure was also made that showed a large magnetoresistive effect of 30 percent at 200 oersted and a field sensitivity of 0.2 percent magnetoresistance per oersted at room temperature.

PMID:
10334983
DOI:
10.1126/science.284.5418.1335
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