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Rev Sci Instrum. 2010 May;81(5):053303. doi: 10.1063/1.3429944.

Instrumentation for the in situ control of carrier recombination characteristics during irradiation by protons.

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Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, Lithuania.


Instrument and methods for the remote and in situ control of carrier recombination parameters during irradiation by protons of energy in the range of 3-8 MeV are presented. Direct techniques for measurements and separation of carrier recombination and trapping/generation characteristics based on the analysis of microwave probed photoconductivity transients during exposure on protons of different energies and irradiations at different temperatures are described. Simultaneously, a spectroscopy of activation energy of dominant traps has been performed before and just after irradiation by temperature scans of variation in the recombination parameters.


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