PMC

Omega 3 supplementation significantly increases plasma and RBC membrane levels of EPA and DHA, as determined by GC-FID. (A) Upper panel: Individual plasma EPA and DHA levels over time from participants taking omega 3 supplements. BL = baseline values. Omega 3 supplements were taken for the first 6 months. Lower panel: Average plasma EPA and DHA levels over time from participants taking omega 3 supplements. (B) Upper panel: Individual RBC membrane EPA and DHA levels over time from participants taking omega 3 supplements. BL = baseline values. Omega 3 supplements were taken for the first 6 months. Lower panel: Average RBC membrane EPA and DHA levels over time from participants taking omega 3 supplements. (C) Changes in EPA and DHA in plasma and RBC membranes over time relative to baseline values. All average values shown are the mean ± SEM. *denotes significant (P < 0.05) difference when compared to baseline values.

Inset: schematics of the two-layer EEC structure under reverse bias. Main panel: the solid lines are fits of Eq. to experiment for samples with R=60 μm under reverse bias. The symbols correspond to the observed resistances adjusted by R_C (α) with [16α,R_C(α)]= (1,10.92 Ω), ◼; (2, 20.45 Ω), ◻; (3, 12.69 Ω), ●; (4, 6.09 Ω), ○; (5, 11.23 Ω), ▲; (6, 13.63 Ω), △; (7, 12.02 Ω), ▼; (8, 9.39 Ω), ▽; (9, 7.81 Ω), ◆; (10, 6.91 Ω), ◇; (11, 13.22 Ω), ▯; (12, 9.16 Ω), ◁; (13, 10.97 Ω), ▶; (14, 13.39 Ω) ▷.

A fragment of a hypothetical input for a 4-species analysis. This is a segment of a multiple alignment of 4 orthologous genes. Notice the gap in one of the genes, designated by * for unknown character. Among the 10 sites in this alignment fragment, there are 6 unique patterns; ω ₁ = (0,0,0,0)^T, ω ₂ = (0,1,0,1)^T, ω ₃ = (1,1,0,1)^T, ω ₄ = (0,0,1,1)^T, ω ₅ = (0,∗,1,1)^T, and  ω ₆ = (0,∗,0,1)^T. This portion of the alignment, therefore, contains 2 copies of ω ₁, 2 copies of ω ₂, 3 copies of ω ₃, and one copy each from ω ₄, ω ₅, and ω ₆.

(a) Resistance values of the 512 GFETs measured from chip 4. The average resistance is 770 Ω (SD = 100 Ω). (b) Histograms of the resistances measured from the five chips. The average resistance values are 790 Ω (SD = 120 Ω), 830 Ω (SD = 140 Ω), 810 Ω (SD = 120 Ω), 770 Ω (SD = 100 Ω), and 810 Ω (SD = 160 Ω) for chips #1–5, respectively. A single noncontacted GFET was subtracted from the data for chips #3 and #5. This gives us a very high device yield of 99.9% with 2558 devices working out of the 2560 measured devices.