Tabletop Fabrication of High-Performance MoS2 Field-Effect Transistors

Ungrae Cho; Seokjin Kim; Chang Yeop Shin; Intek Song

doi:10.1021/acsomega.2c02188

Tabletop Fabrication of High-Performance MoS₂ Field-Effect Transistors

ACS Omega. 2022 Jun 10;7(24):21220-21224. doi: 10.1021/acsomega.2c02188. eCollection 2022 Jun 21.

Authors

Ungrae Cho¹, Seokjin Kim¹, Chang Yeop Shin¹, Intek Song¹

Affiliation

¹ Department of Applied Chemistry, Andong National University (ANU), 1375 Gyeongdong-ro, Andong 36729, Gyeongbuk, Republic of Korea.

Abstract

A simple way to prepare field-effect transistors (FETs) using MoS₂ on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS₂ as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO₂-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis.