Electron transfer (ET) and Auger recombination (AR) processes in quantum dots (QDs) are key mechanisms for the advance of QD-based devices. However, it still remains a challenge to promote ET and suppress AR simultaneously. Here, we use in situ high-pressure ultrafast transient absorption spectroscopy to explore the impact of pressure on the ET between CdSe/ZnS and anthraquinone (AQ) and AR dissolved in cyclohexane. Remarkably, under compression, ET lifetimes are shorten, while suppression of AR lifetimes is present. The promotion of ET is attributed to the shortened distance between CdSe/ZnS and AQ induced by pressure. We rationalize that for the AR suppression, pressure may enhance the formation of an alloy layer at the core/shell interface. These findings indicate that compression is an effective approach to promote ET and suppress AR simultaneously. This study highlights a brand-new approach for modulating ET and AR and provides new routes toward QD-based applications.