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Page 1
Epitaxial Electrodeposition of Ordered Inorganic Materials.
Switzer JA, Banik A. Switzer JA, et al. Acc Chem Res. 2023 Jul 4;56(13):1710-1719. doi: 10.1021/acs.accounts.3c00007. Epub 2023 Apr 24. Acc Chem Res. 2023. PMID: 37093217
It may be used to produce materials that cannot be grown as large single crystals due to either economic or technical constraints. Epitaxial growth is typically limited to ultrahigh vacuum (UHV) techniques such as molecular beam epitaxy and other vapor deposi …
It may be used to produce materials that cannot be grown as large single crystals due to either economic or technical constraints. Epitax …
Optomechanical crystals.
Eichenfield M, Chan J, Camacho RM, Vahala KJ, Painter O. Eichenfield M, et al. Nature. 2009 Nov 5;462(7269):78-82. doi: 10.1038/nature08524. Epub 2009 Oct 18. Nature. 2009. PMID: 19838165 Free article.
A logical next step is thus to create planar circuits that act as both photonic and phononic crystals: optomechanical crystals. ...These planar optomechanical crystals bring the powerful techniques of optics and photonic crystals to bear on phononic crystals, …
A logical next step is thus to create planar circuits that act as both photonic and phononic crystals: optomechanical crystals. ...Th …
Laser-assisted local metal-organic vapor phase epitaxy.
Trippel M, Bläsing J, Wieneke M, Dadgar A, Schmidt G, Bertram F, Christen J, Strittmatter A. Trippel M, et al. Rev Sci Instrum. 2022 Nov 1;93(11):113904. doi: 10.1063/5.0092251. Rev Sci Instrum. 2022. PMID: 36461527
Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. ...As a solution, an epitaxial growth approach using a laser sou …
Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduct …
Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs.
Lee CS, Oh SJ, Heo H, Seo SY, Kim J, Kim YH, Kim D, Ngome Okello OF, Shin H, Sung JH, Choi SY, Kim JS, Kim JK, Jo MH. Lee CS, et al. Nano Lett. 2019 Mar 13;19(3):1814-1820. doi: 10.1021/acs.nanolett.8b04869. Epub 2019 Feb 26. Nano Lett. 2019. PMID: 30779586
In comparison with a series of planar metal contacts, our epitaxial vdW contact was identified to possess intrinsic Schottky barrier heights below 100 meV for both electron and hole injections, contributing to superior ambipolar field-effect transistor (FET) charact …
In comparison with a series of planar metal contacts, our epitaxial vdW contact was identified to possess intrinsic Schottky b …
Direct synthesis of nanopatterned epitaxial graphene on silicon carbide.
Katzmarek DA, Mancini A, Maier SA, Iacopi F. Katzmarek DA, et al. Nanotechnology. 2023 Jul 19;34(40). doi: 10.1088/1361-6528/ace369. Nanotechnology. 2023. PMID: 37399800
This article introduces a straightforward approach for the direct synthesis of transfer-free, nanopatterned epitaxial graphene on silicon carbide on silicon substrates. A catalytic alloy tailored to optimal SiC graphitization is pre-patterned with common lithography and li …
This article introduces a straightforward approach for the direct synthesis of transfer-free, nanopatterned epitaxial graphene on sil …
A singlet-triplet hole spin qubit in planar Ge.
Jirovec D, Hofmann A, Ballabio A, Mutter PM, Tavani G, Botifoll M, Crippa A, Kukucka J, Sagi O, Martins F, Saez-Mollejo J, Prieto I, Borovkov M, Arbiol J, Chrastina D, Isella G, Katsaros G. Jirovec D, et al. Nat Mater. 2021 Aug;20(8):1106-1112. doi: 10.1038/s41563-021-01022-2. Epub 2021 Jun 3. Nat Mater. 2021. PMID: 34083775
Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically con …
Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole …
State of the Art and Future Perspectives in Advanced CMOS Technology.
Radamson HH, Zhu H, Wu Z, He X, Lin H, Liu J, Xiang J, Kong Z, Xiong W, Li J, Cui H, Gao J, Yang H, Du Y, Xu B, Li B, Zhao X, Yu J, Dong Y, Wang G. Radamson HH, et al. Nanomaterials (Basel). 2020 Aug 7;10(8):1555. doi: 10.3390/nano10081555. Nanomaterials (Basel). 2020. PMID: 32784801 Free PMC article. Review.
This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as w …
This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the app …
III-Nitrides Resonant Cavity Photodetector Devices.
Fernández S, Naranjo FB, Sánchez-García MÁ, Calleja E. Fernández S, et al. Materials (Basel). 2020 Oct 5;13(19):4428. doi: 10.3390/ma13194428. Materials (Basel). 2020. PMID: 33027953 Free PMC article.
The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky photodetectors were also processed. The results revealed a planar spectral response for the conventional photodetector, unlike the re …
The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky …
Large-Area Periodic Arrays of Atomically Flat Single-Crystal Gold Nanotriangles Formed Directly on Substrate Surfaces.
Neal RD, Lawson ZR, Tuff WJ, Xu K, Kumar V, Korsa MT, Zhukovskyi M, Rosenberger MR, Adam J, Hachtel JA, Camden JP, Hughes RA, Neretina S. Neal RD, et al. Small. 2022 Dec;18(52):e2205780. doi: 10.1002/smll.202205780. Epub 2022 Nov 7. Small. 2022. PMID: 36344422
The devised growth pathway sees the formation of an array of defect-laden seeds using lithographic and vapor-phase assembly processes followed by their placement in a growth solution promoting planar growth and threefold symmetric side-faceting. The nanotriangles formed in …
The devised growth pathway sees the formation of an array of defect-laden seeds using lithographic and vapor-phase assembly processes follow …
Selective Area Epitaxy of Quasi-1-Dimensional Topological Nanostructures and Networks.
Jalil AR, Schüffelgen P, Valencia H, Schleenvoigt M, Ringkamp C, Mussler G, Luysberg M, Mayer J, Grützmacher D. Jalil AR, et al. Nanomaterials (Basel). 2023 Jan 15;13(2):354. doi: 10.3390/nano13020354. Nanomaterials (Basel). 2023. PMID: 36678107 Free PMC article.
While exposure to ambient conditions and conventional fabrication processes are an obstacle to their technological integration, ultra-high vacuum lithography techniques, such as selective area epitaxy (SAE), provide all the necessary ingredients for their refinement …
While exposure to ambient conditions and conventional fabrication processes are an obstacle to their technological integration, ultra-high v …
70 results