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Showing results for diffused mesa transistor
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The influence of geometry and other fundamental challenges for bio-sensing with field effect transistors.
Rollo S, Rani D, Olthuis W, Pascual García C. Rollo S, et al. Biophys Rev. 2019 Oct;11(5):757-763. doi: 10.1007/s12551-019-00592-5. Epub 2019 Oct 7. Biophys Rev. 2019. PMID: 31588960 Free PMC article. Review.
We present a review of field effect transistors (FET) from the point of view of their applications to label-free sensing in the era of genomics and proteomics. ...In conclusion, we give an overview of different solutions that have been proposed to address all these challen …
We present a review of field effect transistors (FET) from the point of view of their applications to label-free sensing in the era o …
Highly Scalable and Robust Mesa-Island-Structure Metal-Oxide Thin-Film Transistors and Integrated Circuits Enabled by Stress-Diffusive Manipulation.
Kim KT, Moon S, Kim M, Jo JW, Park CY, Kang SH, Kim YH, Park SK. Kim KT, et al. Adv Mater. 2020 Oct;32(40):e2003276. doi: 10.1002/adma.202003276. Epub 2020 Sep 2. Adv Mater. 2020. PMID: 32875685
The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devices along with high-resolution implemented architectures. In this study, a site-specific stress-diffusive manipulation is demonstrate …
The increasing interest in flexible and wearable electronics has demanded a dramatic improvement of mechanical robustness in electronic devi …
Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge-Si Nanowires.
Ridderbos J, Brauns M, de Vries FK, Shen J, Li A, Kölling S, Verheijen MA, Brinkman A, van der Wiel WG, Bakkers EPAM, Zwanenburg FA. Ridderbos J, et al. Nano Lett. 2020 Jan 8;20(1):122-130. doi: 10.1021/acs.nanolett.9b03438. Epub 2019 Dec 6. Nano Lett. 2020. PMID: 31771328 Free PMC article.
We show a hard superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of 250 mT, an important step toward creating and detecting Majorana zero modes in this system. ...The small size of these diffusion-induced superconductors ins …
We show a hard superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of 250 mT, an important st …
High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing.
Rollo S, Rani D, Leturcq R, Olthuis W, Pascual García C. Rollo S, et al. Nano Lett. 2019 May 8;19(5):2879-2887. doi: 10.1021/acs.nanolett.8b04988. Epub 2019 Apr 30. Nano Lett. 2019. PMID: 31014066
The development of next generation medicines demands more sensitive and reliable label-free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to …
The development of next generation medicines demands more sensitive and reliable label-free sensing able to cope with increasing needs of mu …
Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.
Schmucker SW, Namboodiri PN, Kashid R, Wang X, Hu B, Wyrick JE, Myers AF, Schumacher JD, Silver RM, Stewart MD Jr. Schmucker SW, et al. Phys Rev Appl. 2019;11:10.1103/PhysRevApplied.11.034071. doi: 10.1103/PhysRevApplied.11.034071. Phys Rev Appl. 2019. PMID: 31579257 Free PMC article.
Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional delta-doped structures in Si with atomistic precision, with applications from tunnel field-effect transistors to qubits. The combination of a very small contact area and the restrictive thermal …
Scanning tunneling microscopy (STM) enables the fabrication of two-dimensional delta-doped structures in Si with atomistic precision, with a …