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Results: 1 to 20 of 35

1.

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

Musolino M, Tahraoui A, Fernández-Garrido S, Brandt O, Trampert A, Geelhaar L, Riechert H.

Nanotechnology. 2015 Feb 27;26(8):085605. doi: 10.1088/0957-4484/26/8/085605. Epub 2015 Feb 6.

PMID:
25656795
2.

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry.

Somaschini C, Biermanns A, Bietti S, Bussone G, Trampert A, Sanguinetti S, Riechert H, Pietsch U, Geelhaar L.

Nanotechnology. 2014 Dec 5;25(48):485602. doi: 10.1088/0957-4484/25/48/485602. Epub 2014 Nov 13.

PMID:
25391271
3.

Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study.

Luna E, Grandal J, Gallardo E, Calleja JM, Sánchez-García MÁ, Calleja E, Trampert A.

Microsc Microanal. 2014 Oct;20(5):1471-8. doi: 10.1017/S1431927614013038. Epub 2014 Aug 26.

PMID:
25156830
4.

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi.

Wu M, Luna E, Puustinen J, Guina M, Trampert A.

Nanotechnology. 2014 May 23;25(20):205605. doi: 10.1088/0957-4484/25/20/205605. Epub 2014 Apr 30.

PMID:
24786304
5.

Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates.

Dimakis E, Jahn U, Ramsteiner M, Tahraoui A, Grandal J, Kong X, Marquardt O, Trampert A, Riechert H, Geelhaar L.

Nano Lett. 2014 May 14;14(5):2604-9. doi: 10.1021/nl500428v. Epub 2014 Apr 1.

PMID:
24678901
6.

GaAs-Fe₃Si core-shell nanowires: nanobar magnets.

Hilse M, Herfort J, Jenichen B, Trampert A, Hanke M, Schaaf P, Geelhaar L, Riechert H.

Nano Lett. 2013;13(12):6203-9. doi: 10.1021/nl4035994. Epub 2013 Nov 27.

PMID:
24274677
7.

Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy.

Somaschini C, Bietti S, Trampert A, Jahn U, Hauswald C, Riechert H, Sanguinetti S, Geelhaar L.

Nano Lett. 2013 Aug 14;13(8):3607-13. doi: 10.1021/nl401404w. Epub 2013 Aug 1.

PMID:
23898953
8.

Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering.

Poliani E, Wagner MR, Reparaz JS, Mandl M, Strassburg M, Kong X, Trampert A, Sotomayor Torres CM, Hoffmann A, Maultzsch J.

Nano Lett. 2013 Jul 10;13(7):3205-12. doi: 10.1021/nl401277y. Epub 2013 Jun 28.

PMID:
23795596
9.

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy.

Wu M, Trampert A.

Nanotechnology. 2013 Jun 28;24(25):255701. doi: 10.1088/0957-4484/24/25/255701. Epub 2013 May 24.

PMID:
23708384
10.

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.

Albert S, Bengoechea-Encabo A, Sánchez-García MA, Kong X, Trampert A, Calleja E.

Nanotechnology. 2013 May 3;24(17):175303. doi: 10.1088/0957-4484/24/17/175303. Epub 2013 Apr 4.

PMID:
23558410
11.

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

Fernández-Garrido S, Kong X, Gotschke T, Calarco R, Geelhaar L, Trampert A, Brandt O.

Nano Lett. 2012 Dec 12;12(12):6119-25. doi: 10.1021/nl302664q. Epub 2012 Nov 9.

PMID:
23130785
12.

Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.

Kong X, Albert S, Bengoechea-Encabo A, Sanchez-Garcia MA, Calleja E, Trampert A.

Nanotechnology. 2012 Dec 7;23(48):485701. doi: 10.1088/0957-4484/23/48/485701. Epub 2012 Nov 2.

PMID:
23123435
13.

Current path in light emitting diodes based on nanowire ensembles.

Limbach F, Hauswald C, Lähnemann J, Wölz M, Brandt O, Trampert A, Hanke M, Jahn U, Calarco R, Geelhaar L, Riechert H.

Nanotechnology. 2012 Nov 23;23(46):465301. doi: 10.1088/0957-4484/23/46/465301. Epub 2012 Oct 23.

PMID:
23092897
14.

Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces.

Luna E, Guzmán A, Trampert A, Alvarez G.

Phys Rev Lett. 2012 Sep 21;109(12):126101. Epub 2012 Sep 18.

PMID:
23005962
15.

Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).

Biermanns A, Breuer S, Trampert A, Davydok A, Geelhaar L, Pietsch U.

Nanotechnology. 2012 Aug 3;23(30):305703. doi: 10.1088/0957-4484/23/30/305703. Epub 2012 Jul 2.

PMID:
22751267
16.

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction.

Hanke M, Kaganer VM, Bierwagen O, Niehle M, Trampert A.

Nanoscale Res Lett. 2012 Mar 29;7(1):203. doi: 10.1186/1556-276X-7-203.

17.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.

Barbagini F, Bengoechea-Encabo A, Albert S, Martinez J, Sanchez García MA, Trampert A, Calleja E.

Nanoscale Res Lett. 2011 Dec 14;6:632. doi: 10.1186/1556-276X-6-632.

18.

Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns.

Kong X, Ristić J, Sanchez-Garcia MA, Calleja E, Trampert A.

Nanotechnology. 2011 Oct 14;22(41):415701. doi: 10.1088/0957-4484/22/41/415701. Epub 2011 Sep 14.

PMID:
21914935
19.

Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires.

Knelangen M, Hanke M, Luna E, Schrottke L, Brandt O, Trampert A.

Nanotechnology. 2011 Sep 7;22(36):365703. doi: 10.1088/0957-4484/22/36/365703. Epub 2011 Aug 11. Erratum in: Nanotechnology. 2011 Nov 18;22(46):469501.

PMID:
21836335
20.

Macro- and micro-strain in GaN nanowires on Si(111).

Jenichen B, Brandt O, Pfüller C, Dogan P, Knelangen M, Trampert A.

Nanotechnology. 2011 Jul 22;22(29):295714. doi: 10.1088/0957-4484/22/29/295714. Epub 2011 Jun 21.

PMID:
21693799
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