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Items: 1 to 20 of 41

1.

Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.

Kong X, Li H, Albert S, Bengoechea-Encabo A, Sanchez-Garcia MA, Calleja E, Draxl C, Trampert A.

Nanotechnology. 2016 Feb 12;27(6):065705. doi: 10.1088/0957-4484/27/6/065705. Epub 2016 Jan 13.

PMID:
26759358
2.

Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix.

Taliercio T, Guilengui VN, Cerutti L, Rodriguez JB, Barho F, Rodrigo MJ, Gonzalez-Posada F, Tournié E, Niehle M, Trampert A.

Opt Express. 2015 Nov 16;23(23):29423-33. doi: 10.1364/OE.23.029423.

PMID:
26698426
3.

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

Zettler JK, Corfdir P, Hauswald C, Luna E, Jahn U, Flissikowski T, Schmidt E, Ronning C, Trampert A, Geelhaar L, Grahn HT, Brandt O, Fernández-Garrido S.

Nano Lett. 2016 Feb 10;16(2):973-80. doi: 10.1021/acs.nanolett.5b03931. Epub 2016 Jan 6.

PMID:
26675526
4.

Detecting lateral composition modulation in dilute Ga(As,Bi) epilayers.

Wu M, Hanke M, Luna E, Puustinen J, Guina M, Trampert A.

Nanotechnology. 2015 Oct 23;26(42):425701. doi: 10.1088/0957-4484/26/42/425701. Epub 2015 Sep 30.

PMID:
26421507
5.

Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces.

Oliveira MH Jr, Lopes JM, Schumann T, Galves LA, Ramsteiner M, Berlin K, Trampert A, Riechert H.

Nat Commun. 2015 Jul 9;6:7632. doi: 10.1038/ncomms8632.

6.

Electron tomography on nanopores embedded in epitaxial GaSb thin films.

Niehle M, Trampert A.

Micron. 2015 Jun;73:54-62. doi: 10.1016/j.micron.2015.03.010. Epub 2015 Apr 1.

PMID:
25900544
7.

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

Musolino M, Tahraoui A, Fernández-Garrido S, Brandt O, Trampert A, Geelhaar L, Riechert H.

Nanotechnology. 2015 Feb 27;26(8):085605. doi: 10.1088/0957-4484/26/8/085605. Epub 2015 Feb 6.

PMID:
25656795
8.

Axial InAs/GaAs heterostructures on silicon in a nanowire geometry.

Somaschini C, Biermanns A, Bietti S, Bussone G, Trampert A, Sanguinetti S, Riechert H, Pietsch U, Geelhaar L.

Nanotechnology. 2014 Dec 5;25(48):485602. doi: 10.1088/0957-4484/25/48/485602. Epub 2014 Nov 13.

PMID:
25391271
9.

Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study.

Luna E, Grandal J, Gallardo E, Calleja JM, Sánchez-García MÁ, Calleja E, Trampert A.

Microsc Microanal. 2014 Oct;20(5):1471-8. doi: 10.1017/S1431927614013038. Epub 2014 Aug 26.

PMID:
25156830
10.

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi.

Wu M, Luna E, Puustinen J, Guina M, Trampert A.

Nanotechnology. 2014 May 23;25(20):205605. doi: 10.1088/0957-4484/25/20/205605. Epub 2014 Apr 30.

PMID:
24786304
11.

Coaxial multishell (In,Ga)As/GaAs nanowires for near-infrared emission on Si substrates.

Dimakis E, Jahn U, Ramsteiner M, Tahraoui A, Grandal J, Kong X, Marquardt O, Trampert A, Riechert H, Geelhaar L.

Nano Lett. 2014 May 14;14(5):2604-9. doi: 10.1021/nl500428v. Epub 2014 Apr 1.

PMID:
24678901
12.

GaAs-Fe₃Si core-shell nanowires: nanobar magnets.

Hilse M, Herfort J, Jenichen B, Trampert A, Hanke M, Schaaf P, Geelhaar L, Riechert H.

Nano Lett. 2013;13(12):6203-9. doi: 10.1021/nl4035994. Epub 2013 Nov 27.

PMID:
24274677
13.

Control over the number density and diameter of GaAs nanowires on Si(111) mediated by droplet epitaxy.

Somaschini C, Bietti S, Trampert A, Jahn U, Hauswald C, Riechert H, Sanguinetti S, Geelhaar L.

Nano Lett. 2013 Aug 14;13(8):3607-13. doi: 10.1021/nl401404w. Epub 2013 Aug 1.

PMID:
23898953
14.

Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering.

Poliani E, Wagner MR, Reparaz JS, Mandl M, Strassburg M, Kong X, Trampert A, Sotomayor Torres CM, Hoffmann A, Maultzsch J.

Nano Lett. 2013 Jul 10;13(7):3205-12. doi: 10.1021/nl401277y. Epub 2013 Jun 28.

PMID:
23795596
15.

Coherent GdN clusters in epitaxial GaN:Gd thin films determined by transmission electron microscopy.

Wu M, Trampert A.

Nanotechnology. 2013 Jun 28;24(25):255701. doi: 10.1088/0957-4484/24/25/255701. Epub 2013 May 24.

PMID:
23708384
16.

Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.

Albert S, Bengoechea-Encabo A, Sánchez-García MA, Kong X, Trampert A, Calleja E.

Nanotechnology. 2013 May 3;24(17):175303. doi: 10.1088/0957-4484/24/17/175303. Epub 2013 Apr 4.

PMID:
23558410
17.

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

Fernández-Garrido S, Kong X, Gotschke T, Calarco R, Geelhaar L, Trampert A, Brandt O.

Nano Lett. 2012 Dec 12;12(12):6119-25. doi: 10.1021/nl302664q. Epub 2012 Nov 9.

PMID:
23130785
18.

Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.

Kong X, Albert S, Bengoechea-Encabo A, Sanchez-Garcia MA, Calleja E, Trampert A.

Nanotechnology. 2012 Dec 7;23(48):485701. doi: 10.1088/0957-4484/23/48/485701. Epub 2012 Nov 2.

PMID:
23123435
19.

Current path in light emitting diodes based on nanowire ensembles.

Limbach F, Hauswald C, Lähnemann J, Wölz M, Brandt O, Trampert A, Hanke M, Jahn U, Calarco R, Geelhaar L, Riechert H.

Nanotechnology. 2012 Nov 23;23(46):465301. doi: 10.1088/0957-4484/23/46/465301. Epub 2012 Oct 23.

PMID:
23092897
20.

Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces.

Luna E, Guzmán A, Trampert A, Alvarez G.

Phys Rev Lett. 2012 Sep 21;109(12):126101. Epub 2012 Sep 18.

PMID:
23005962
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