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Results: 12

1.

Persistent enhancement of the carrier density in electron irradiated InAs nanowires.

Durand C, Berthe M, Makoudi Y, Nys JP, Leturcq R, Caroff P, Grandidier B.

Nanotechnology. 2013 Jul 12;24(27):275706. doi: 10.1088/0957-4484/24/27/275706. Epub 2013 Jun 14.

PMID:
23764855
[PubMed]
2.

Narrowing the length distribution of Ge nanowires.

Dubrovskii VG, Xu T, Lambert Y, Nys JP, Grandidier B, Stiévenard D, Chen W, Pareige P.

Phys Rev Lett. 2012 Mar 9;108(10):105501. Epub 2012 Mar 5.

PMID:
22463421
[PubMed]
3.

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques.

Xu T, Dick KA, Plissard S, Nguyen TH, Makoudi Y, Berthe M, Nys JP, Wallart X, Grandidier B, Caroff P.

Nanotechnology. 2012 Mar 9;23(9):095702. doi: 10.1088/0957-4484/23/9/095702. Epub 2012 Feb 10.

PMID:
22322440
[PubMed - indexed for MEDLINE]
4.

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient.

Murthy DH, Xu T, Chen WH, Houtepen AJ, Savenije TJ, Siebbeles LD, Nys JP, Krzeminski C, Grandidier B, Stiévenard D, Pareige P, Jomard F, Patriarche G, Lebedev OI.

Nanotechnology. 2011 Aug 5;22(31):315710. doi: 10.1088/0957-4484/22/31/315710. Epub 2011 Jul 8.

PMID:
21737870
[PubMed]
5.

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy.

Xu T, Sulerzycki J, Nys JP, Patriarche G, Grandidier B, Stiévenard D.

Nanoscale Res Lett. 2011 Feb 2;6(1):113. doi: 10.1186/1556-276X-6-113.

PMID:
21711645
[PubMed]
Free PMC Article
6.

Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum.

Diesinger H, Deresmes D, Nys JP, Mélin T.

Ultramicroscopy. 2010 Jan;110(2):162-9. doi: 10.1016/j.ultramic.2009.10.016. Epub 2009 Nov 4.

PMID:
19939564
[PubMed]
7.

Kelvin force microscopy at the second cantilever resonance: an out-of-vacuum crosstalk compensation setup.

Diesinger H, Deresmes D, Nys JP, Mélin T.

Ultramicroscopy. 2008 Jul;108(8):773-81. doi: 10.1016/j.ultramic.2008.01.003. Epub 2008 Jan 31.

PMID:
18342448
[PubMed]
8.

Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs.

Mahieu G, Grandidier B, Deresmes D, Nys JP, Stiévenard D, Ebert P.

Phys Rev Lett. 2005 Jan 21;94(2):026407. Epub 2005 Jan 20.

PMID:
15698206
[PubMed]
9.

Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Grandidier B, Niquet YM, Legrand B, Nys JP, Priester C, Stievenard D, Gerard JM, Thierry-Mieg V V.

Phys Rev Lett. 2000 Jul 31;85(5):1068-71.

PMID:
10991476
[PubMed - as supplied by publisher]
10.

Growth of ultrathin iron silicide films: Observation of the gamma -FeSi2 phase by electron spectroscopies.

Wallart X, Nys JP, Tételin C.

Phys Rev B Condens Matter. 1994 Feb 15;49(8):5714-5717. No abstract available.

PMID:
10011535
[PubMed - as supplied by publisher]
11.

Probing the local atomic environment at the interfaces in the Fe-Si system by the surface-extended energy-loss fine-structure technique.

Zeng HS, Wallart X, Nys JP, Dalmai G, Friedel P.

Phys Rev B Condens Matter. 1991 Dec 15;44(24):13811-13814. No abstract available.

PMID:
9999597
[PubMed - as supplied by publisher]
12.

Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system.

Wallart X, Nys JP, Zeng HS, Dalmai G, Lefebvre I I, Lannoo M.

Phys Rev B Condens Matter. 1990 Feb 15;41(5):3087-3096. No abstract available.

PMID:
9994082
[PubMed - as supplied by publisher]

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