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Results: 19

1.

Impact of device size and thickness of Al2O 3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application.

Panja R, Roy S, Jana D, Maikap S.

Nanoscale Res Lett. 2014 Dec;9(1):2410. doi: 10.1186/1556-276X-9-692. Epub 2014 Dec 23.

2.

RRAM characteristics using a new Cr/GdOx/TiN structure.

Jana D, Dutta M, Samanta S, Maikap S.

Nanoscale Res Lett. 2014 Dec;9(1):2404. doi: 10.1186/1556-276X-9-680. Epub 2014 Dec 17.

3.

Conductive-bridging random access memory: challenges and opportunity for 3D architecture.

Jana D, Roy S, Panja R, Dutta M, Rahaman SZ, Mahapatra R, Maikap S.

Nanoscale Res Lett. 2015 Apr 18;10:188. doi: 10.1186/s11671-015-0880-9. eCollection 2015.

4.

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.

Maikap S, Panja R, Jana D.

Nanoscale Res Lett. 2014 Jul 26;9(1):366. doi: 10.1186/1556-276X-9-366. eCollection 2014.

5.

Self-compliance RRAM characteristics using a novel W/TaO x /TiN structure.

Maikap S, Jana D, Dutta M, Prakash A.

Nanoscale Res Lett. 2014 Jun 10;9(1):292. doi: 10.1186/1556-276X-9-292. eCollection 2014.

6.

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface.

Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS.

Nanoscale Res Lett. 2014 Apr 11;9(1):152. doi: 10.1186/1556-276X-9-152. eCollection 2014.

7.

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure.

Kumar P, Maikap S, Prakash A, Tien TC.

Nanoscale Res Lett. 2014 Apr 12;9(1):179. doi: 10.1186/1556-276X-9-179.

8.

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS.

Nanoscale Res Lett. 2014 Mar 17;9(1):125. doi: 10.1186/1556-276X-9-125.

9.

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.

Jana D, Maikap S, Prakash A, Chen YY, Chiu HC, Yang JR.

Nanoscale Res Lett. 2014 Jan 8;9(1):12. doi: 10.1186/1556-276X-9-12.

10.

Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory.

Prakash A, Jana D, Samanta S, Maikap S.

Nanoscale Res Lett. 2013 Dec 17;8(1):527. doi: 10.1186/1556-276X-8-527.

11.

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeOx/W cross-point memories.

Rahaman SZ, Maikap S.

Nanoscale Res Lett. 2013 Dec 5;8(1):509. doi: 10.1186/1556-276X-8-509.

12.

Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface.

Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS.

Nanoscale Res Lett. 2013 Oct 22;8(1):419. doi: 10.1186/1556-276X-8-419. No abstract available.

13.

TaOx-based resistive switching memories: prospective and challenges.

Prakash A, Jana D, Maikap S.

Nanoscale Res Lett. 2013 Oct 9;8(1):418. doi: 10.1186/1556-276X-8-418.

14.
15.

Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.

Prakash A, Maikap S, Rahaman SZ, Majumdar S, Manna S, Ray SK.

Nanoscale Res Lett. 2013 May 8;8(1):220. doi: 10.1186/1556-276X-8-220.

16.

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.

Rahaman SZ, Maikap S, Das A, Prakash A, Wu YH, Lai CS, Tien TC, Chen WS, Lee HY, Chen FT, Tsai MJ, Chang LB.

Nanoscale Res Lett. 2012 Nov 6;7(1):614. doi: 10.1186/1556-276X-7-614.

17.

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.

Rahaman SZ, Maikap S, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ.

Nanoscale Res Lett. 2012 Jun 26;7(1):345. doi: 10.1186/1556-276X-7-345.

18.

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.

Banerjee W, Maikap S, Lai CS, Chen YY, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ, Yang JR.

Nanoscale Res Lett. 2012 Mar 22;7(1):194. doi: 10.1186/1556-276X-7-194.

19.

Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO(2)/HfAlO nanocrystal/Al(2)O(3)/Pt capacitors.

Maikap S, Rahaman SZ, Tien TC.

Nanotechnology. 2008 Oct 29;19(43):435202. doi: 10.1088/0957-4484/19/43/435202. Epub 2008 Sep 22.

PMID:
21832685
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