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Results: 1 to 20 of 40

1.

High-gain 1.3  μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10  Gb/s.

Fitsios D, Giannoulis G, Korpijärvi VM, Viheriälä J, Laakso A, Iliadis N, Dris S, Spyropoulou M, Avramopoulos H, Kanellos GT, Pleros N, Guina M.

Appl Opt. 2015 Jan 1;54(1):46-52. doi: 10.1364/AO.54.000046.

PMID:
25967005
2.

Mode-locked Tm,Ho:KLu(WO<sub>4</sub>)<sub>2</sub> laser at 2060 nm using InGaSb-based SESAMs.

Aleksandrov V, Gluth A, Petrov V, Buchvarov I, Steinmeyer G, Paajaste J, Suomalainen S, Härkönen A, Guina M, Mateos X, Díaz F, Griebner U.

Opt Express. 2015 Feb 23;23(4):4614-9. doi: 10.1364/OE.23.004614.

PMID:
25836498
3.

GaSb-based SESAM mode-locked Tm:YAG ceramic laser at 2 µm.

Gluth A, Wang Y, Petrov V, Paajaste J, Suomalainen S, Härkönen A, Guina M, Steinmeyer G, Mateos X, Veronesi S, Tonelli M, Li J, Pan Y, Guo J, Griebner U.

Opt Express. 2015 Jan 26;23(2):1361-9. doi: 10.1364/OE.23.001361.

PMID:
25835894
4.

Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

Tuominen M, Yasir M, Lång J, Dahl J, Kuzmin M, Mäkelä J, Punkkinen M, Laukkanen P, Kokko K, Schulte K, Punkkinen R, Korpijärvi VM, Polojärvi V, Guina M.

Phys Chem Chem Phys. 2015 Mar 14;17(10):7060-6. doi: 10.1039/c4cp05972g.

PMID:
25686555
5.

SESAM mode-locked red praseodymium laser.

Gaponenko M, Metz PW, Härkönen A, Heuer A, Leinonen T, Guina M, Südmeyer T, Huber G, Kränkel C.

Opt Lett. 2014 Dec 15;39(24):6939-41. doi: 10.1364/OL.39.006939.

PMID:
25503035
6.

Ultrahigh precision nonlinear reflectivity measurement system for saturable absorber mirrors with self-referenced fluence characterization.

Orsila L, Härkönen A, Hyyti J, Guina M, Steinmeyer G.

Opt Lett. 2014 Aug 1;39(15):4384-7. doi: 10.1364/OL.39.004384.

PMID:
25078183
7.

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi.

Wu M, Luna E, Puustinen J, Guina M, Trampert A.

Nanotechnology. 2014 May 23;25(20):205605. doi: 10.1088/0957-4484/25/20/205605. Epub 2014 Apr 30.

PMID:
24786304
8.

High-efficiency 20 W yellow VECSEL.

Kantola E, Leinonen T, Ranta S, Tavast M, Guina M.

Opt Express. 2014 Mar 24;22(6):6372-80. doi: 10.1364/OE.22.006372.

PMID:
24663985
9.

Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures.

Dönmez O, Sarcan F, Erol A, Gunes M, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2014 Mar 24;9(1):141. doi: 10.1186/1556-276X-9-141.

10.

Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells.

Gubanov A, Polojärvi V, Aho A, Tukiainen A, Tkachenko NV, Guina M.

Nanoscale Res Lett. 2014 Feb 17;9(1):80. doi: 10.1186/1556-276X-9-80.

11.

Performance assessment of multijunction solar cells incorporating GaInNAsSb.

Aho A, Tukiainen A, Polojärvi V, Guina M.

Nanoscale Res Lett. 2014 Feb 5;9(1):61. doi: 10.1186/1556-276X-9-61.

12.

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs.

Lisesivdin SB, Khan NA, Mazzucato S, Balkan N, Adams MJ, Korpijärvi VM, Guina M, Mezosi G, Sorel M.

Nanoscale Res Lett. 2014 Jan 13;9(1):22. doi: 10.1186/1556-276X-9-22.

13.

Mode-locked VECSEL emitting 5 ps pulses at 675 nm.

Ranta S, Härkönen A, Leinonen T, Orsila L, Lyytikäinen J, Steinmeyer G, Guina M.

Opt Lett. 2013 Jul 1;38(13):2289-91. doi: 10.1364/OL.38.002289.

PMID:
23811905
14.

Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.

Tommila J, Schramm A, Hakkarainen TV, Dumitrescu M, Guina M.

Nanotechnology. 2013 Jun 14;24(23):235204. doi: 10.1088/0957-4484/24/23/235204. Epub 2013 May 15.

PMID:
23676532
15.

Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs.

Yang K, Heinecke D, Paajaste J, Kölbl C, Dekorsy T, Suomalainen S, Guina M.

Opt Express. 2013 Feb 25;21(4):4311-8. doi: 10.1364/OE.21.004311.

PMID:
23481964
16.

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures.

Erol A, Akalin E, Sarcan F, Donmez O, Akyuz S, Arikan CM, Puustinen J, Guina M.

Nanoscale Res Lett. 2012 Nov 28;7(1):656. doi: 10.1186/1556-276X-7-656.

17.

Dilute nitride and GaAs n-i-p-i solar cells.

Mazzucato S, Royall B, Ketlhwaafetse R, Balkan N, Salmi J, Puustinen J, Guina M, Smith A, Gwilliam R.

Nanoscale Res Lett. 2012 Nov 20;7(1):631. doi: 10.1186/1556-276X-7-631.

18.

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells.

Sarcan F, Donmez O, Gunes M, Erol A, Arikan MC, Puustinen J, Guina M.

Nanoscale Res Lett. 2012 Sep 25;7(1):529. doi: 10.1186/1556-276X-7-529.

19.

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs.

Tommila J, Strelow C, Schramm A, Hakkarainen TV, Dumitrescu M, Kipp T, Guina M.

Nanoscale Res Lett. 2012 Jun 19;7(1):313. doi: 10.1186/1556-276X-7-313.

20.

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.

Schramm A, Tommila J, Strelow C, Hakkarainen TV, Tukiainen A, Dumitrescu M, Mews A, Kipp T, Guina M.

Nanotechnology. 2012 May 4;23(17):175701. doi: 10.1088/0957-4484/23/17/175701. Epub 2012 Apr 5.

PMID:
22481170
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