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Items: 5


Spin injection in n-type resonant tunneling diodes.

Orsi Gordo V, Herval LK, Galeti HV, Gobato YG, Brasil MJ, Marques GE, Henini M, Airey RJ.

Nanoscale Res Lett. 2012 Oct 25;7(1):592. doi: 10.1186/1556-276X-7-592.


Spin effects in InAs self-assembled quantum dots.

Dos Santos EC, Gobato YG, Brasil MJ, Taylor DA, Henini M.

Nanoscale Res Lett. 2011 Feb 3;6(1):115. doi: 10.1186/1556-276X-6-115.


Circular polarization in a non-magnetic resonant tunneling device.

Dos Santos LF, Gobato YG, Teodoro MD, Lopez-Richard V, Marques GE, Brasil MJ, Orlita M, Kunc J, Maude DK, Henini M, Airey RJ.

Nanoscale Res Lett. 2011 Jan 25;6(1):101. doi: 10.1186/1556-276X-6-101.


Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields.

Teodoro MD, Campo VL Jr, Lopez-Richard V, Marega E Jr, Marques GE, Gobato YG, Iikawa F, Brasil MJ, Abuwaar ZY, Dorogan VG, Mazur YI, Benamara M, Salamo GJ.

Phys Rev Lett. 2010 Feb 26;104(8):086401. Epub 2010 Feb 22.


Magnetotunneling analysis of the scattering processes in a double-barrier structure with a two-dimensional emitter.

Gobato YG, Chevoir F, Berroir JM, Bois P, Guldner Y, Nagle J, Vieren JP, Vinter B.

Phys Rev B Condens Matter. 1991 Feb 15;43(6):4843-4848. No abstract available.


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