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Nanoscale Res Lett. 2012 Oct 6;7(1):553. doi: 10.1186/1556-276X-7-553.

Scanning X-ray nanodiffraction: from the experimental approach towards spatially resolved scattering simulations.

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  • 1, Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, D-10117, Germany. dubslaff@pdi-berlin.de.


: An enhancement on the method of X-ray diffraction simulations for applications using nanofocused hard X-ray beams is presented. We combine finite element method, kinematical scattering calculations, and a spot profile of the X-ray beam to simulate the diffraction of definite parts of semiconductor nanostructures. The spot profile could be acquired experimentally by X-ray ptychography. Simulation results are discussed and compared with corresponding X-ray nanodiffraction experiments on single SiGe dots and dot molecules.

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