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Year Number of Results
2002 2
2005 7
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2008 6
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2011 17
2012 25
2013 11
2014 6
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163 results

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Page 1
Deep reactive ion etching of cylindrical nanopores in silicon for photonic crystals.
Goodwin MJ, Harteveld CAM, de Boer MJ, Vos WL. Goodwin MJ, et al. Nanotechnology. 2023 Mar 16;34(22). doi: 10.1088/1361-6528/acc034. Nanotechnology. 2023. PMID: 36928122
Periodic arrays of deep nanopores etched in silicon by deep reactive ion etching are desirable structures for photonic crystals and other nanostructures for silicon nanophotonics. ...To add further degrees of control, we implemented a 3-s …
Periodic arrays of deep nanopores etched in silicon by deep reactive ion etching are desirable structures for photonic …
Ultrahigh throughput silicon nanomanufacturing by simultaneous reactive ion synthesis and etching.
Chen Y, Xu Z, Gartia MR, Whitlock D, Lian Y, Liu GL. Chen Y, et al. ACS Nano. 2011 Oct 25;5(10):8002-12. doi: 10.1021/nn2024754. Epub 2011 Sep 27. ACS Nano. 2011. PMID: 21936527
The manufacturing of nanostructured devices relies on either bottom-up approaches such as synthesis or growth process or top-down approaches such as lithography or etching process. ...Rapid low-cost manufacturing of high-density, high-uniformity, light-trapping nano …
The manufacturing of nanostructured devices relies on either bottom-up approaches such as synthesis or growth process or top-down app …
Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.
Dang Z, Breese MB, Recio-Sánchez G, Azimi S, Song J, Liang H, Banas A, Torres-Costa V, Martín-Palma RJ. Dang Z, et al. Nanoscale Res Lett. 2012 Jul 23;7(1):416. doi: 10.1186/1556-276X-7-416. Nanoscale Res Lett. 2012. PMID: 22824206 Free PMC article.
A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the …
A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon
Epitaxial Electrodeposition of Ordered Inorganic Materials.
Switzer JA, Banik A. Switzer JA, et al. Acc Chem Res. 2023 Jul 4;56(13):1710-1719. doi: 10.1021/acs.accounts.3c00007. Epub 2023 Apr 24. Acc Chem Res. 2023. PMID: 37093217
This is particularly true in semiconductor materials, as evidenced by the huge impact that bulk single crystals of silicon have had on electronics. Another approach to producing highly ordered materials is the epitaxial growth of crystals on a single-cryst
This is particularly true in semiconductor materials, as evidenced by the huge impact that bulk single crystals of silicon hav …
Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices.
Walavalkar SS, Homyk AP, Henry MD, Scherer A. Walavalkar SS, et al. Nanoscale. 2013 Feb 7;5(3):927-31. doi: 10.1039/c2nr32981f. Epub 2013 Jan 4. Nanoscale. 2013. PMID: 23292113
In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible etching scheme allows us to fabricate silicon devices with quant …
In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon
Electrical and Photoelectrical Properties of Reduced Graphene Oxide-Porous Silicon Nanostructures.
Olenych IB, Aksimentyeva OI, Monastyrskii LS, Horbenko YY, Partyka MV. Olenych IB, et al. Nanoscale Res Lett. 2017 Dec;12(1):272. doi: 10.1186/s11671-017-2043-7. Epub 2017 Apr 13. Nanoscale Res Lett. 2017. PMID: 28410550 Free PMC article.
In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. ...The widening of spectral range of photosensitivity of the hybrid structures in sho …
In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphen …
Effect of catalyst shape and etchant composition on etching direction in metal-assisted chemical etching of silicon to fabricate 3D nanostructures.
Hildreth OJ, Lin W, Wong CP. Hildreth OJ, et al. ACS Nano. 2009 Dec 22;3(12):4033-42. doi: 10.1021/nn901174e. ACS Nano. 2009. PMID: 19954171
Metal-assisted chemical etching (MaCE) of silicon in conjunction with shaped catalysts was used to fabricate 3D nanostructures such as sloping channels, cycloids, and spirals along with traditional vertical channels. The investigation used silver nanorods, na …
Metal-assisted chemical etching (MaCE) of silicon in conjunction with shaped catalysts was used to fabricate 3D nanostructu
Tailoring Patterned Visible-Light Scattering by Silicon Photonic Crystals.
Cheng P, Kampmann R, Wang D, Sinzinger S, Schaaf P. Cheng P, et al. ACS Appl Mater Interfaces. 2021 Dec 22;13(50):60319-60326. doi: 10.1021/acsami.1c16182. Epub 2021 Dec 10. ACS Appl Mater Interfaces. 2021. PMID: 34890189
In this work, we present an approach for nanostructuring the silicon substrate to silicon photonic crystals. By precisely controlling the etching time and etching path after using nanoimprint lithography, ordered arrays of inverted Si nan …
In this work, we present an approach for nanostructuring the silicon substrate to silicon photonic crystals. By …
Black silicon solar cell: analysis optimization and evolution towards a thinner and flexible future.
Roy AB, Dhar A, Choudhuri M, Das S, Hossain SM, Kundu A. Roy AB, et al. Nanotechnology. 2016 Jul 29;27(30):305302. doi: 10.1088/0957-4484/27/30/305302. Epub 2016 Jun 20. Nanotechnology. 2016. PMID: 27319809
It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests of reduced reflection for wide angles of incidence, reduced surface area enhancement due to the nano-structuring of the substrate and reduc …
It is seen that a unique class of geometry: micro-nanostructure has the potential to find a balance between the conflicting interests …
Friction-induced selective etching on silicon by TMAH solution.
Zhou C, Li J, Wu L, Guo G, Wang H, Chen P, Yu B, Qian L. Zhou C, et al. RSC Adv. 2018 Oct 23;8(63):36043-36048. doi: 10.1039/c8ra07064d. eCollection 2018 Oct 22. RSC Adv. 2018. PMID: 35558468 Free PMC article.
In contrast, the applied normal load for scratching on silicon had little effect on the hillock height produced by selective etching in TMAH solution. Further analysis showed that crystal distortions or crystal amorphization could act as a mask against …
In contrast, the applied normal load for scratching on silicon had little effect on the hillock height produced by selective etchi
163 results