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Experimental investigation and numerical modelling of photocurrent oscillations in lattice matched Ga1-xInxNyAs1-y/GaAs quantum well p-i-n photodiodes.

Royall B, Khalil H, Mazzucato S, Erol A, Balkan N.

Nanoscale Res Lett. 2014 Feb 18;9(1):84. doi: 10.1186/1556-276X-9-84.


Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm.

Chaqmaqchee FA, Balkan N.

Nanoscale Res Lett. 2014 Jan 17;9(1):37. doi: 10.1186/1556-276X-9-37.


Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs.

Lisesivdin SB, Khan NA, Mazzucato S, Balkan N, Adams MJ, Korpijärvi VM, Guina M, Mezosi G, Sorel M.

Nanoscale Res Lett. 2014 Jan 13;9(1):22. doi: 10.1186/1556-276X-9-22.


Carrier trapping and escape times in p-i-n GaInNAs MQW structures.

Khalil HM, Balkan N.

Nanoscale Res Lett. 2014 Jan 13;9(1):21. doi: 10.1186/1556-276X-9-21.


Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors.

Momox E, Zakhleniuk N, Balkan N.

Nanoscale Res Lett. 2012 Nov 24;7(1):647. doi: 10.1186/1556-276X-7-647.


Dilute nitride and GaAs n-i-p-i solar cells.

Mazzucato S, Royall B, Ketlhwaafetse R, Balkan N, Salmi J, Puustinen J, Guina M, Smith A, Gwilliam R.

Nanoscale Res Lett. 2012 Nov 20;7(1):631. doi: 10.1186/1556-276X-7-631.


Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: evidence for p-type conductivity.

Balkan N, Tiras E, Erol A, Gunes M, Ardali S, Arikan M, Lagarde D, Carrère H, Marie X, Gumus C.

Nanoscale Res Lett. 2012 Oct 18;7(1):574. doi: 10.1186/1556-276X-7-574.


Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures.

Khalil HM, Royall B, Mazzucato S, Balkan N.

Nanoscale Res Lett. 2012 Sep 28;7(1):539. doi: 10.1186/1556-276X-7-539.


Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications.

Chaqmaqchee FA, Balkan N.

Nanoscale Res Lett. 2012 Sep 25;7(1):526. doi: 10.1186/1556-276X-7-526.


Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3μm operation.

Chaqmaqchee FA, Balkan N, Herrero JM.

Nanoscale Res Lett. 2012 Sep 25;7(1):525. doi: 10.1186/1556-276X-7-525.


The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys.

Donmez O, Gunes M, Erol A, Arikan CM, Balkan N, Schaff WJ.

Nanoscale Res Lett. 2012 Aug 31;7(1):490. doi: 10.1186/1556-276X-7-490.


[Can meropenem E-test be used to estimate the presence of carbapenem resistance gene cfiA among Bacteroides fragilis strains?].

Toprak Ülger N, Ilki A, Ozel N, Balkan N, Söyletir G.

Mikrobiyol Bul. 2011 Jul;45(3):385-91. Turkish.


Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells.

Khalil HM, Sun Y, Balkan N, Amann A, Sopanen M.

Nanoscale Res Lett. 2011 Mar 2;6(1):191. doi: 10.1186/1556-276X-6-191.


GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

Chaqmaqchee FA, Mazzucato S, Oduncuoglu M, Balkan N, Sun Y, Gunes M, Hugues M, Hopkinson M.

Nanoscale Res Lett. 2011 Jan 27;6(1):104. doi: 10.1186/1556-276X-6-104.


Electronic transport in n- and p-type modulation doped Ga(x)In(1-x)N(y)As(1-y)/ GaAs quantum wells.

Sun Y, Balkan N, Aslan M, Lisesivdin SB, Carrere H, Arikan MC, Marie X.

J Phys Condens Matter. 2009 Apr 29;21(17):174210. doi: 10.1088/0953-8984/21/17/174210. Epub 2009 Apr 1.


Warm-electron power loss in GaAs/Ga1-xAlxAs multiple quantum wells: Well-width dependence.

Balkan N, Çelik H, Vickers AJ, Cankurtaran M.

Phys Rev B Condens Matter. 1995 Dec 15;52(24):17210-17222. No abstract available.


Hot-electron transport in GaAs/Ga1-xAlxAs quantum-well structures.

Gupta R, Balkan N, Ridley BK.

Phys Rev B Condens Matter. 1992 Sep 15;46(12):7745-7754. No abstract available.

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