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Nanoscale Res Lett. 2011 Oct 31;6(1):576. doi: 10.1186/1556-276X-6-576.

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy.

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  • 1Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398, Suzhou, China. sllu2008@sinano.ac.cn.


We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.

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