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Opt Express. 2010 Aug 30;18(18):19438-43. doi: 10.1364/OE.18.019438.

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers.

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  • 1Photonics & Nanoscience Group, School of Engineering, Physics and Mathematics, University of Dundee, Dundee, DD1 4HN, UK.


A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability.

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