Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Results: 1 to 20 of 96

1.

Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon.

Priolo F, Spinella C, Rimini E.

Phys Rev B Condens Matter. 1990 Mar 15;41(8):5235-5242. No abstract available.

PMID:
9994384
[PubMed - as supplied by publisher]
2.

Dominant influence of beam-induced interface rearrangement on solid-phase epitaxial crystallization of amorphous silicon.

Williams JS, Elliman RG, Brown WL, Seidel TE.

Phys Rev Lett. 1985 Sep 30;55(14):1482-1485. No abstract available.

PMID:
10031835
[PubMed - as supplied by publisher]
3.

Restricted epitaxial growth of crystallites in hydrogenated nanocrystalline silicon during thermal crystallization experiments.

Roura P, Farjas J, Roca i Cabarrocas P.

J Nanosci Nanotechnol. 2009 Jun;9(6):3700-7.

PMID:
19504906
[PubMed]
4.

Evidence for diffusion-limited kinetics of ion-beam-induced epitaxial crystallization in silicon.

Heera V V, Henkel T, Kögler R, Skorupa W.

Phys Rev B Condens Matter. 1995 Dec 1;52(22):15776-15784. No abstract available.

PMID:
9980952
[PubMed - as supplied by publisher]
5.

Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition.

Linnros J, Holmén G, Svensson B.

Phys Rev B Condens Matter. 1985 Sep 1;32(5):2770-2777. No abstract available.

PMID:
9937381
[PubMed - as supplied by publisher]
6.

Mössbauer study of the Fe-Si phases produced by Fe implantation followed by ion-beam-induced epitaxial crystallization.

Desimoni J, Sánchez FH, Fernández van Raap MB, Lin XW, Bernas H, Clerc C.

Phys Rev B Condens Matter. 1996 Nov 1;54(18):12787-12792. No abstract available.

PMID:
9985134
[PubMed - as supplied by publisher]
7.

Correction of pixel sensitivity variation and off-axis response for amorphous silicon EPID dosimetry.

Greer PB.

Med Phys. 2005 Dec;32(12):3558-68.

PMID:
16475754
[PubMed - indexed for MEDLINE]
8.

Electron-beam-induced topographical, chemical, and structural patterning of amorphous titanium oxide films.

Kern P, Müller Y, Patscheider J, Michler J.

J Phys Chem B. 2006 Nov 30;110(47):23660-8.

PMID:
17125324
[PubMed - indexed for MEDLINE]
9.

FIB-induced damage in silicon.

Rubanov S, Munroe PR.

J Microsc. 2004 Jun;214(Pt 3):213-21.

PMID:
15157189
[PubMed]
10.

Ion beam-induced amorphous-to-tetragonal phase transformation and grain growth of nanocrystalline zirconia.

Lian J, Zhang J, Namavar F, Zhang Y, Lu F, Haider H, Garvin K, Weber WJ, Ewing RC.

Nanotechnology. 2009 Jun 17;20(24):245303. doi: 10.1088/0957-4484/20/24/245303. Epub 2009 May 26.

PMID:
19468161
[PubMed - indexed for MEDLINE]
11.

Mechanism of hydrogen-induced crystallization of amorphous silicon.

Sriraman S, Agarwal S, Aydil ES, Maroudas D.

Nature. 2002 Jul 4;418(6893):62-5.

PMID:
12097905
[PubMed]
12.

Formation of crystalline silicon in kaolinite by electron beam irradiation and in situ heating in the HVEM.

Lee S, Kim YM, Kim YJ.

J Electron Microsc (Tokyo). 2007 Aug;56(4):153-5. Epub 2007 Oct 19.

PMID:
17951396
[PubMed]
13.

Interface-state-controlled segregation of gold during ion-beam-induced epitaxy of amorphous silicon.

Custer JS, Thompson MO, Jacobson DC, Poate JM.

Phys Rev B Condens Matter. 1991 Oct 15;44(16):8774-8778. No abstract available.

PMID:
9998832
[PubMed - as supplied by publisher]
14.

A density-driven phase transition between semiconducting and metallic polyamorphs of silicon.

McMillan PF, Wilson M, Daisenberger D, Machon D.

Nat Mater. 2005 Sep;4(9):680-4. Epub 2005 Aug 21.

PMID:
16113681
[PubMed - indexed for MEDLINE]
15.

Fabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer.

Li SY, Lin P, Lee CY, Ho MS, Tseng TY.

J Nanosci Nanotechnol. 2004 Nov;4(8):968-71.

PMID:
15656187
[PubMed - indexed for MEDLINE]
16.

Electron beam induced structural transformations of SWNTs and DWNTs grown on Si3N4/Si substrates.

Satishkumar BC, Paulson S, Johnson AT, Luzzi DE.

J Nanosci Nanotechnol. 2006 May;6(5):1350-6.

PMID:
16792364
[PubMed - indexed for MEDLINE]
17.

Microscopic description of light induced defects in amorphous silicon solar cells.

Wagner LK, Grossman JC.

Phys Rev Lett. 2008 Dec 31;101(26):265501.

PMID:
19437650
[PubMed]
18.

Off-axis dose response characteristics of an amorphous silicon electronic portal imaging device.

Greer PB.

Med Phys. 2007 Oct;34(10):3815-24.

PMID:
17985627
[PubMed - indexed for MEDLINE]
19.

Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures.

Zhou J, Chen GR, Liu Y, Xu J, Wang T, Wan N, Ma ZY, Li W, Song C, Chen KJ.

Opt Express. 2009 Jan 5;17(1):156-62.

PMID:
19129883
[PubMed - indexed for MEDLINE]
20.

Thermal stability of Ti and Pt nanowires manufactured by Ga+ focused ion beam.

Inkson BJ, Dehm G, Wagner T.

J Microsc. 2004 Jun;214(Pt 3):252-60.

PMID:
15157193
[PubMed]

Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Supplemental Content

Write to the Help Desk