Format
Sort by

Send to

Choose Destination

Links from PubMed

Items: 1 to 20 of 117

1.

Investigation of deep metastable traps in Si delta -doped GaAs/Al0.33Ga0.67As quantum-well samples using noise spectroscopy.

Carey DD, Stoddart ST, Bending SJ, Harris JJ, Foxon CT.

Phys Rev B Condens Matter. 1996 Jul 15;54(4):2813-2821. No abstract available.

PMID:
9986135
2.

Photocurrent spectroscopy of a (001)- and a (111)-oriented GaAs/Al0.33Ga0.67As quantum-well structure.

Kajikawa Y, Hata M, Sugiyama N, Katayama Y.

Phys Rev B Condens Matter. 1990 Nov 15;42(15):9540-9545. No abstract available.

PMID:
9995193
3.

Optical properties of a high-quality (311)-oriented GaAs/Al0.33Ga0.67As single quantum well.

Brandt O, Kanamoto K, Tokuda Y, Tsukada N, Wada O, Tanimura J.

Phys Rev B Condens Matter. 1993 Dec 15;48(23):17599-17602. No abstract available.

PMID:
10008382
4.

Evidence of a mobility edge in the second subband of an Al0.33Ga0.67As-GaAs heterojunction.

Fletcher R, Zaremba E, D'Iorio M, Foxon CT, Harris JJ.

Phys Rev B Condens Matter. 1988 Oct 15;38(11):7866-7869. No abstract available.

PMID:
9945530
5.

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE.

Mari RH, Shafi M, Aziz M, Khatab A, Taylor D, Henini M.

Nanoscale Res Lett. 2011 Feb 28;6(1):180. doi: 10.1186/1556-276X-6-180.

6.

Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells.

Wu J, Wang ZM, Dorogan VG, Li S, Lee J, Mazur YI, Kim ES, Salamo GJ.

Nanoscale Res Lett. 2013 Jan 2;8(1):5. doi: 10.1186/1556-276X-8-5.

7.

Scaling and universality of integer quantum Hall plateau-to-plateau transitions.

Li W, Csáthy GA, Tsui DC, Pfeiffer LN, West KW.

Phys Rev Lett. 2005 May 27;94(20):206807. Epub 2005 May 26.

PMID:
16090272
8.

Intersubband optical absorption in heavily doped n-type GaAs/Al0.3Ga0.7As multiple quantum wells.

Jogai B, Manasreh MO, Stutz CE, Whitney RL, Kinell DK.

Phys Rev B Condens Matter. 1992 Sep 15;46(11):7208-7211. No abstract available.

PMID:
10002434
9.

Indium-doped GaAs: Investigation of deep traps.

Laurenti JP, Wolter K, Roentgen P, Seibert K, Kurz H, Camassel J.

Phys Rev B Condens Matter. 1989 Mar 15;39(9):5934-5946. No abstract available.

PMID:
9949015
10.

Direct measurement of the effective-mass renormalization in n-type modulation-doped Al0.23Ga0.77As/In0.08Ga0.92As/GaAs quantum wells.

Adams S, Galbraith I I, Murdin BN, Mitchell KW, Cavenett BC, Pidgeon CR, Kirby PB, Smith RS, Miller B.

Phys Rev B Condens Matter. 1992 Nov 15;46(20):13611-13614. No abstract available.

PMID:
10003413
11.

Photoluminescence-excitation-correlation spectroscopic study of a high-density two-dimensional electron gas in GaAs/Al0.3Ga0.7As modulation-doped quantum wells.

Liu DW, Xu XM, Chen YF.

Phys Rev B Condens Matter. 1994 Feb 15;49(7):4640-4645. No abstract available.

PMID:
10011389
12.

Current characteristics of the double-barrier Al0.25Ga0.75As/Al0.45Ga0.55As/GaAs single-quantum-well structures.

Osotchan T, Chin VW, Tansley TL.

Phys Rev B Condens Matter. 1995 Aug 15;52(7):5202-5209. No abstract available.

PMID:
9981705
13.

Microscopic mechanisms of self-compensation in Si delta-doped GaAs.

Modesti S, Duca R, Finetti P, Ceballos G, Piccin M, Rubini S, Franciosi A.

Phys Rev Lett. 2004 Feb 27;92(8):086104. Epub 2004 Feb 27.

PMID:
14995797
14.

Photoluminescence from partially Si-doped AlAs/GaAs single-quantum-well structures.

Kamijoh T, Sugiyama N, Katayama Y.

Phys Rev B Condens Matter. 1989 Jul 15;40(2):1316-1318. No abstract available.

PMID:
9991962
15.

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.

Wang Y, Zou J, Zhao ZM, Hao Z, Wang KL.

Nanotechnology. 2009 Jul 29;20(30):305301. doi: 10.1088/0957-4484/20/30/305301. Epub 2009 Jul 7.

PMID:
19581699
16.

Effect of the erbium dopant architecture on the femtosecond relaxation dynamics of silicon nanocrystals.

Samia AC, Lou Y, Burda C, Senter RA, Coffer JL.

J Chem Phys. 2004 May 8;120(18):8716-23.

PMID:
15267802
17.

Fermi level of low-temperature-grown GaAs on Si- delta -doped GaAs.

Hsu TM, Lee WC, Wu JR, Chyi J.

Phys Rev B Condens Matter. 1995 Jun 15;51(23):17215-17218. No abstract available.

PMID:
9978740
18.

Admittance spectroscopy studies of boron delta -doped Si quantum wells.

Zhu Jh, Gong Dw, Zhang B, Lu F, Sheng C, Sun Hh, Wang X.

Phys Rev B Condens Matter. 1995 Sep 15;52(12):8959-8963. No abstract available.

PMID:
9979884
19.

Photoluminescence due to a bound-to-bound transition in a GaAs-Al0.3Ga0.7As quantum-well structure.

Reynolds DC, Evans KR, Merkel KG, Stutz CE, Yu PW.

Phys Rev B Condens Matter. 1991 Apr 15;43(11):9087-9095. No abstract available.

PMID:
9996577
20.

Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well.

Szmulowicz F, Manasreh MO, Stutz CE, Vaughan T.

Phys Rev B Condens Matter. 1994 Oct 15;50(16):11618-11623. No abstract available.

PMID:
9975294
Items per page

Supplemental Content

Write to the Help Desk