Format
Items per page
Sort by

Send to:

Choose Destination

Links from PubMed

Items: 1 to 20 of 87

1.

Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy.

Buyanova IA, Chen WM, Henry A, Ni W, Hansson GV, Monemar B.

Phys Rev B Condens Matter. 1995 Oct 15;52(16):12006-12012. No abstract available.

PMID:
9980340
2.

Photoluminescence spectra of oxygen-doped ZnSe grown by molecular-beam epitaxy.

Akimoto K, Miyajima T, Mori Y.

Phys Rev B Condens Matter. 1989 Feb 15;39(5):3138-3144. No abstract available.

PMID:
9948611
3.

Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy.

Mäkinen J, Laine T, Partanen J, Saarinen K, Hautojärvi P, Tappura K, Hakkarainen T, Asonen H, Pessa M, Kauppinen JP, Vänttinen K, Paalanen MA, Likonen J.

Phys Rev B Condens Matter. 1996 Mar 15;53(12):7851-7862. No abstract available.

PMID:
9982235
4.

The synthesis and structural characterization of boron-doped silicon-nanocrystals with enhanced electroconductivity.

Sato K, Niino K, Fukata N, Hirakuri K, Yamauchi Y.

Nanotechnology. 2009 Sep 9;20(36):365207. doi: 10.1088/0957-4484/20/36/365207. Epub 2009 Aug 18.

PMID:
19687551
5.

Photoluminescence and optically detected magnetic resonance of Si/Si1-xGex strained-layer superlattices grown by molecular-beam epitaxy.

Glaser ER, Kennedy TA, Godbey DJ, Thompson PE, Wang KL, Chern CH.

Phys Rev B Condens Matter. 1993 Jan 15;47(3):1305-1315. No abstract available.

PMID:
10006140
6.

Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers.

Teukam Z, Chevallier J, Saguy C, Kalish R, Ballutaud D, Barbé M, Jomard F, Tromson-Carli A, Cytermann C, Butler JE, Bernard M, Baron C, Deneuville A.

Nat Mater. 2003 Jul;2(7):482-6.

PMID:
12876564
7.

Evidence from electrical transport and photoluminescence spectroscopy of a band of localized deep donors in high-purity n-type InP grown by chemical-beam epitaxy.

Benzaquen R, Benzaquen M, Charbonneau S, Poole PJ, Rao TS, Lacelle C, Roth AP, Leonelli R.

Phys Rev B Condens Matter. 1994 Dec 15;50(23):16964-16972. No abstract available.

PMID:
9976092
8.

Band-to-acceptor transitions in the low-temperature-luminescence spectrum of Li-doped p-type ZnSe grown by molecular-beam epitaxy.

Zhang Y, Skromme BJ, Cheng H.

Phys Rev B Condens Matter. 1993 Jan 15;47(4):2107-2121. No abstract available.

PMID:
10006250
9.

Spin-flip Raman scattering from Cd1-xMnxTe:In epilayers and modulation-doped Cd1-xMnxTe:In/CdTe superlattices grown by photoassisted molecular-beam epitaxy.

Suh E, Bartholomew DU, Ramdas AK, Bicknell RN, Harper RL, Giles NC, Schetzina JF.

Phys Rev B Condens Matter. 1987 Dec 15;36(17):9358-9361. No abstract available.

PMID:
9942820
10.

Above-band-gap photoluminescence from n-type CdTe:I grown by molecular-beam epitaxy.

Lee J, Giles NC, Summers CJ.

Phys Rev B Condens Matter. 1994 Apr 15;49(16):11459-11462. No abstract available.

PMID:
10010004
11.

Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates.

Zhang Y, Zhang Z, Lin B, Fu Z, Xu J.

J Phys Chem B. 2005 Oct 20;109(41):19200-3.

PMID:
16853477
12.

Distribution of point defects in Si(100)/Si grown by low-temperature molecular-beam epitaxy and solid-phase epitaxy.

Asoka-Kumar P, Gossmann H, Unterwald FC, Feldman LC, Leung TC, Au HL, Talyanski V V, Nielsen B, Lynn KG.

Phys Rev B Condens Matter. 1993 Aug 15;48(8):5345-5353. No abstract available.

PMID:
10009054
13.

Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation.

Kanungo PD, Kögler R, Nguyen-Duc K, Zakharov N, Werner P, Gösele U.

Nanotechnology. 2009 Apr 22;20(16):165706. doi: 10.1088/0957-4484/20/16/165706. Epub 2009 Apr 1.

PMID:
19420579
14.

Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layers.

Buyanova IA, Chen WM, Henry A, Ni W, Hansson GV, Monemar B.

Phys Rev B Condens Matter. 1996 Apr 15;53(15):9587-9590. No abstract available.

PMID:
9982507
15.

Effect of ion doping with donor and acceptor impurities on intensity and lifetime of photoluminescence from SiO2 films with silicon quantum dots.

Mikhaylov AN, Tetelbaum DI, Burdov VA, Gorshkov ON, Belov AI, Kambarov DA, Belyakov VA, Vasiliev VK, Kovalev AI, Gaponova DM.

J Nanosci Nanotechnol. 2008 Feb;8(2):780-8.

PMID:
18464406
16.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer.

Luo XH, Wang RM, Zhang XP, Zhang HZ, Yu DP, Luo MC.

Micron. 2004;35(6):475-80.

PMID:
15120133
17.

0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures.

Yu PW, Robinson GD, Sizelove JR, Stutz CE.

Phys Rev B Condens Matter. 1994 Feb 15;49(7):4689-4694. No abstract available.

PMID:
10011396
18.

Resonant photoluminescence studies of the growth-induced defects in GaAs grown by molecular beam epitaxy.

Charbonneau S, McMullan WG, Thewalt ML.

Phys Rev B Condens Matter. 1988 Aug 15;38(5):3587-3590. No abstract available.

PMID:
9946717
19.

Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy.

Zhang Y, Chang B, Yang Z, Niu J, Xiong Y, Shi F, Guo H, Zeng Y.

Appl Opt. 2009 Mar 20;48(9):1715-20.

PMID:
19305469
20.

Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown InxGa

Andersson TG, Chen ZG, Kulakovskii VD, Uddin A, Vallin JT.

Phys Rev B Condens Matter. 1988 Mar 15;37(8):4032-4038. No abstract available.

PMID:
9945037
Format
Items per page
Sort by

Send to:

Choose Destination

Supplemental Content

Write to the Help Desk