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Results: 1 to 20 of 91

1.

Theoretical study of band offsets at semiconductor interfaces.

Van de Walle CG, Martin RM.

Phys Rev B Condens Matter. 1987 May 15;35(15):8154-8165. No abstract available.

PMID:
9941152
[PubMed - as supplied by publisher]
2.

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations.

Alkauskas A, Broqvist P, Devynck F, Pasquarello A.

Phys Rev Lett. 2008 Sep 5;101(10):106802. Epub 2008 Sep 3.

PMID:
18851241
[PubMed]
3.

Improved model-solid-theory calculations for valence-band offsets at semiconductor-semiconductor interfaces.

Qteish A, Needs RJ.

Phys Rev B Condens Matter. 1992 Jan 15;45(3):1317-1326. No abstract available.

PMID:
10001609
[PubMed - as supplied by publisher]
4.

Chemical trend of band offsets at wurtzite/zinc-blende heterocrystalline semiconductor interfaces.

Murayama M, Nakayama T.

Phys Rev B Condens Matter. 1994 Feb 15;49(7):4710-4724. No abstract available.

PMID:
10011399
[PubMed - as supplied by publisher]
5.

Tuning band offsets at semiconductor interfaces by intralayer deposition.

Peressi M, Baroni S, Resta R, Baldereschi A.

Phys Rev B Condens Matter. 1991 Mar 15;43(9):7347-7350. No abstract available.

PMID:
9998208
[PubMed - as supplied by publisher]
6.

Dipole effects and band offsets at semiconductor interfaces.

Christensen NE.

Phys Rev B Condens Matter. 1988 Mar 15;37(9):4528-4538. No abstract available.

PMID:
9945111
[PubMed - as supplied by publisher]
7.

Determination of band offsets in heterostructured colloidal nanorods using scanning tunneling spectroscopy.

Steiner D, Dorfs D, Banin U, Della Sala F, Manna L, Millo O.

Nano Lett. 2008 Sep;8(9):2954-8. doi: 10.1021/nl801848x. Epub 2008 Aug 9.

PMID:
18690751
[PubMed]
8.
9.

Bonding, energies, and band offsets of Si-ZrO2 and HfO2 gate oxide interfaces.

Peacock PW, Robertson J.

Phys Rev Lett. 2004 Feb 6;92(5):057601. Epub 2004 Feb 6.

PMID:
14995342
[PubMed]
10.

Theory of semiconductor heterojunction valence-band offsets: From supercell band-structure calculations toward a simple model.

Lambrecht WR, Segall B.

Phys Rev Lett. 1988 Oct 10;61(15):1764-1767. No abstract available.

PMID:
10038890
[PubMed - as supplied by publisher]
11.

New method to study band offsets applied to strained Si/Si1-xGex(100) heterojunction interfaces.

Ni W, Knall J, Hansson GV.

Phys Rev B Condens Matter. 1987 Nov 15;36(14):7744-7747. No abstract available.

PMID:
9942570
[PubMed - as supplied by publisher]
12.

Interface-bond-polarity model for semiconductor heterojunction band offsets.

Lambrecht WR, Segall B.

Phys Rev B Condens Matter. 1990 Feb 15;41(5):2832-2848. No abstract available.

PMID:
9994049
[PubMed - as supplied by publisher]
13.

Wannier excitons in semiconductor quantum wells with small valence-band offsets: A generalized variational approach.

Wu JW, Nurmikko AV.

Phys Rev B Condens Matter. 1988 Jul 15;38(2):1504-1507. No abstract available.

PMID:
9946413
[PubMed - as supplied by publisher]
14.

Comparison of dipole layers, band offsets, and formation enthalpies of GaAs-AlAs(110) and (001) interfaces.

Bylander DM, Kleinman L.

Phys Rev Lett. 1987 Nov 2;59(18):2091-2094. No abstract available.

PMID:
10035415
[PubMed - as supplied by publisher]
15.

Heterojunction band offsets for polar interfaces: From a thin to a thick covalent intralayer.

Mujica A, Pérez R, Flores F, Muñoz A.

Phys Rev B Condens Matter. 1992 Oct 15;46(15):9641-9647. No abstract available.

PMID:
10002775
[PubMed - as supplied by publisher]
16.

Valence-band offsets at strained Si/Ge interfaces.

Colombo L, Resta R, Baroni S.

Phys Rev B Condens Matter. 1991 Sep 15;44(11):5572-5579. No abstract available.

PMID:
9998396
[PubMed - as supplied by publisher]
17.

Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole.

Muoz A, Chetty N, Martin RM.

Phys Rev B Condens Matter. 1990 Feb 15;41(5):2976-2981. No abstract available.

PMID:
9994068
[PubMed - as supplied by publisher]
18.

Valence-band offsets and formation enthalpy of reconstructed GaAs/Ge(001) interfaces.

Lee S, Bylander DM, Kleinman L.

Phys Rev B Condens Matter. 1990 May 15;41(14):10264-10267. No abstract available.

PMID:
9993431
[PubMed - as supplied by publisher]
19.

Influence of Au overlayers on valence-band offsets for buried CaF2/Si(111) interfaces.

Xu F, Vos M, Weaver JH.

Phys Rev B Condens Matter. 1989 Apr 15;39(11):8008-8011. No abstract available.

PMID:
9947495
[PubMed - as supplied by publisher]
20.

Theoretical evaluation of zirconia and hafnia as gate oxides for si microelectronics.

Fiorentini V, Gulleri G.

Phys Rev Lett. 2002 Dec 23;89(26):266101. Epub 2002 Dec 9.

PMID:
12484834
[PubMed]

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