Similar articles for PMID: 29554799

Year	Number of Results
1983	1
1984	2
1988	1
1999	3
2000	2
2002	1
2003	1
2005	1
2007	4
2008	5
2009	4
2010	3
2011	11
2012	6
2013	5
2014	12
2015	16
2016	14
2017	32
2018	31
2019	24
2020	31
2021	36
2022	20
2023	7
2024	0

1

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies.

Faraz T, Knoops HCM, Verheijen MA, van Helvoirt CAA, Karwal S, Sharma A, Beladiya V, Szeghalmi A, Hausmann DM, Henri J, Creatore M, Kessels WMM. Faraz T, et al. ACS Appl Mater Interfaces. 2018 Apr 18;10(15):13158-13180. doi: 10.1021/acsami.8b00183. Epub 2018 Apr 9. ACS Appl Mater Interfaces. 2018. PMID: 29554799 Free PMC article.

2

Plasma-Enhanced Atomic Layer Deposition of HfO₂ with Substrate Biasing: Thin Films for High-Reflective Mirrors.

Beladiya V, Faraz T, Schmitt P, Munser AS, Schröder S, Riese S, Mühlig C, Schachtler D, Steger F, Botha R, Otto F, Fritz T, van Helvoirt C, Kessels WMM, Gargouri H, Szeghalmi A. Beladiya V, et al. ACS Appl Mater Interfaces. 2022 Mar 30;14(12):14677-14692. doi: 10.1021/acsami.1c21889. Epub 2022 Mar 21. ACS Appl Mater Interfaces. 2022. PMID: 35311275

3

Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N₂ Plasma on Planar and 3D Substrate Topographies.

Faraz T, van Drunen M, Knoops HC, Mallikarjunan A, Buchanan I, Hausmann DM, Henri J, Kessels WM. Faraz T, et al. ACS Appl Mater Interfaces. 2017 Jan 18;9(2):1858-1869. doi: 10.1021/acsami.6b12267. Epub 2017 Jan 6. ACS Appl Mater Interfaces. 2017. PMID: 28059494

4

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing.

Legallais M, Mehdi H, David S, Bassani F, Labau S, Pelissier B, Baron T, Martinez E, Ghibaudo G, Salem B. Legallais M, et al. ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39870-39880. doi: 10.1021/acsami.0c10515. Epub 2020 Aug 21. ACS Appl Mater Interfaces. 2020. PMID: 32805854

5

Structural, Optical and Electrical Properties of HfO₂ Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition.

Kim KM, Jang JS, Yoon SG, Yun JY, Chung NK. Kim KM, et al. Materials (Basel). 2020 Apr 25;13(9):2008. doi: 10.3390/ma13092008. Materials (Basel). 2020. PMID: 32344793 Free PMC article.

6

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study.

Beladiya V , Becker M , Faraz T , Kessels WMME , Schenk P , Otto F , Fritz T , Gruenewald M , Helbing C , Jandt KD , Tünnermann A , Sierka M , Szeghalmi A . Beladiya V , et al. Nanoscale. 2020 Jan 23;12(3):2089-2102. doi: 10.1039/c9nr07202k. Nanoscale. 2020. PMID: 31912855

7

Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition.

Li M, Jin ZX, Zhang W, Bai YH, Cao YQ, Li WM, Wu D, Li AD. Li M, et al. Sci Rep. 2019 Jul 18;9(1):10438. doi: 10.1038/s41598-019-47049-z. Sci Rep. 2019. PMID: 31320728 Free PMC article.

8

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.

Kim HS, Meng X, Kim SJ, Lucero AT, Cheng L, Byun YC, Lee JS, Hwang SM, Kondusamy ALN, Wallace RM, Goodman G, Wan AS, Telgenhoff M, Hwang BK, Kim J. Kim HS, et al. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44825-44833. doi: 10.1021/acsami.8b15291. Epub 2018 Dec 11. ACS Appl Mater Interfaces. 2018. PMID: 30485061

9

MOS Capacitance Measurements for PEALD TiO₂ Dielectric Films Grown under Different Conditions and the Impact of Al₂O₃ Partial-Monolayer Insertion.

Chiappim W, Watanabe M, Dias V, Testoni G, Rangel R, Fraga M, Maciel H, Dos Santos Filho S, Pessoa R. Chiappim W, et al. Nanomaterials (Basel). 2020 Feb 17;10(2):338. doi: 10.3390/nano10020338. Nanomaterials (Basel). 2020. PMID: 32079219 Free PMC article.

10

Characteristics of silicon nitride deposited by very high frequency (162 MHz)-plasma enhanced atomic layer deposition using bis(diethylamino)silane.

Byun JY, Ji YJ, Kim KH, Kim KS, Tak HW, Ellingboe AR, Yeom GY. Byun JY, et al. Nanotechnology. 2021 Feb 12;32(7):075706. doi: 10.1088/1361-6528/abb974. Nanotechnology. 2021. PMID: 32942270

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