Similar articles for PMID: 27065755

Year	Number of Results
1999	1
2001	1
2007	2
2008	1
2009	2
2010	8
2011	6
2012	6
2013	10
2014	10
2015	13
2016	15
2017	16
2018	10
2019	10
2020	16
2021	15
2022	16
2023	5
2024	0

1

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.

Zhu T, Ding T, Tang F, Han Y, Ali M, Badcock T, Kappers MJ, Shields AJ, Smoukov SK, Oliver RA. Zhu T, et al. Cryst Growth Des. 2016 Feb 3;16(2):1010-1016. doi: 10.1021/acs.cgd.5b01560. Epub 2015 Dec 29. Cryst Growth Des. 2016. PMID: 27065755 Free PMC article.

2

Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).

Jang J, Woo S, Min D, Nam O. Jang J, et al. J Nanosci Nanotechnol. 2015 Mar;15(3):1895-906. doi: 10.1166/jnn.2015.10327. J Nanosci Nanotechnol. 2015. PMID: 26413605

3

Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire.

Song J, Choi J, Zhang C, Deng Z, Xie Y, Han J. Song J, et al. ACS Appl Mater Interfaces. 2019 Sep 11;11(36):33140-33146. doi: 10.1021/acsami.9b11316. Epub 2019 Aug 27. ACS Appl Mater Interfaces. 2019. PMID: 31454216

4

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask.

Ji Q, Li L, Zhang W, Wang J, Liu P, Xie Y, Yan T, Yang W, Chen W, Hu X. Ji Q, et al. ACS Appl Mater Interfaces. 2016 Aug 24;8(33):21480-9. doi: 10.1021/acsami.6b07044. Epub 2016 Aug 15. ACS Appl Mater Interfaces. 2016. PMID: 27484167

5

Defect structure in heteroepitaxial semipolar (1122) (Ga, Al)N.

Arroyo Rojas Dasilva Y, Chauvat MP, Ruterana P, Lahourcade L, Monroy E, Nataf G. Arroyo Rojas Dasilva Y, et al. J Phys Condens Matter. 2010 Sep 8;22(35):355802. doi: 10.1088/0953-8984/22/35/355802. Epub 2010 Aug 11. J Phys Condens Matter. 2010. PMID: 21403298

6

Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.

Park AH, Seo TH, Chandramohan S, Lee GH, Min KH, Lee S, Kim MJ, Hwang YG, Suh EK. Park AH, et al. Nanoscale. 2015 Oct 7;7(37):15099-105. doi: 10.1039/c5nr04239a. Nanoscale. 2015. PMID: 26351123

7

Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.

Zhang L, Li X, Shao Y, Yu J, Wu Y, Hao X, Yin Z, Dai Y, Tian Y, Huo Q, Shen Y, Hua Z, Zhang B. Zhang L, et al. ACS Appl Mater Interfaces. 2015 Mar 4;7(8):4504-10. doi: 10.1021/am5087775. Epub 2015 Feb 19. ACS Appl Mater Interfaces. 2015. PMID: 25665033

8

Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.

You G, Liu J, Jiang Z, Wang L, El-Masry NA, Hosalli AM, Bedair SM, Xu J. You G, et al. Opt Lett. 2014 Mar 15;39(6):1501-4. doi: 10.1364/OL.39.001501. Opt Lett. 2014. PMID: 24690823

9

Filtering of Defects in Semipolar (11-22) GaN Using 2-Steps Lateral Epitaxial Overgrowth.

Kriouche N, Leroux M, Vennéguès P, Nemoz M, Nataf G, de Mierry P. Kriouche N, et al. Nanoscale Res Lett. 2010 Sep 2;5(12):1878-81. doi: 10.1007/s11671-010-9724-9. Nanoscale Res Lett. 2010. PMID: 21170140 Free PMC article.

10

Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates.

Li W, Wang L, Chai R, Wen L, Wang Z, Guo W, Wang H, Yang S. Li W, et al. Nanomaterials (Basel). 2022 Aug 30;12(17):3007. doi: 10.3390/nano12173007. Nanomaterials (Basel). 2022. PMID: 36080045 Free PMC article.

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