Similar articles for PMID: 25658044

Year	Number of Results
2005	1
2006	5
2007	6
2008	6
2009	7
2010	11
2011	6
2012	19
2013	22
2014	14
2015	19
2016	14
2017	16
2018	10
2019	8
2020	13
2021	10
2022	7
2023	4
2024	0

1

Carrier transport in high mobility InAs nanowire junctionless transistors.

Konar A, Mathew J, Nayak K, Bajaj M, Pandey RK, Dhara S, Murali KV, Deshmukh MM. Konar A, et al. Nano Lett. 2015 Mar 11;15(3):1684-90. doi: 10.1021/nl5043165. Epub 2015 Feb 9. Nano Lett. 2015. PMID: 25658044

2

Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

Chen L, Cai F, Otuonye U, Lu WD. Chen L, et al. Nano Lett. 2016 Jan 13;16(1):420-6. doi: 10.1021/acs.nanolett.5b04038. Epub 2015 Dec 21. Nano Lett. 2016. PMID: 26674542

3

Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.

Tomioka K, Izhizaka F, Fukui T. Tomioka K, et al. Nano Lett. 2015 Nov 11;15(11):7253-7. doi: 10.1021/acs.nanolett.5b02165. Epub 2015 Oct 22. Nano Lett. 2015. PMID: 26468962

4

Temperature-dependent electron mobility in InAs nanowires.

Gupta N, Song Y, Holloway GW, Sinha U, Haapamaki CM, Lapierre RR, Baugh J. Gupta N, et al. Nanotechnology. 2013 Jun 7;24(22):225202. doi: 10.1088/0957-4484/24/22/225202. Epub 2013 Apr 30. Nanotechnology. 2013. PMID: 23633474

5

Field dependent transport properties in InAs nanowire field effect transistors.

Dayeh SA, Susac D, Kavanagh KL, Yu ET, Wang D. Dayeh SA, et al. Nano Lett. 2008 Oct;8(10):3114-9. doi: 10.1021/nl801256p. Epub 2008 Sep 11. Nano Lett. 2008. PMID: 18783282

6

Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors.

Lan C, Yip S, Kang X, Meng Y, Bu X, Ho JC. Lan C, et al. ACS Appl Mater Interfaces. 2020 Dec 16;12(50):56330-56337. doi: 10.1021/acsami.0c17317. Epub 2020 Dec 8. ACS Appl Mater Interfaces. 2020. PMID: 33287538

7

Surface State Dynamics Dictating Transport in InAs Nanowires.

Lynall D, Nair SV, Gutstein D, Shik A, Savelyev IG, Blumin M, Ruda HE. Lynall D, et al. Nano Lett. 2018 Feb 14;18(2):1387-1395. doi: 10.1021/acs.nanolett.7b05106. Epub 2018 Jan 24. Nano Lett. 2018. PMID: 29345949

8

Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

Dey AW, Svensson J, Ek M, Lind E, Thelander C, Wernersson LE. Dey AW, et al. Nano Lett. 2013;13(12):5919-24. doi: 10.1021/nl4029494. Epub 2013 Nov 18. Nano Lett. 2013. PMID: 24224956

9

InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.

Burke AM, Carrad DJ, Gluschke JG, Storm K, Fahlvik Svensson S, Linke H, Samuelson L, Micolich AP. Burke AM, et al. Nano Lett. 2015 May 13;15(5):2836-43. doi: 10.1021/nl5043243. Epub 2015 Apr 21. Nano Lett. 2015. PMID: 25879492

10

Surface roughness induced electron mobility degradation in InAs nanowires.

Wang F, Yip S, Han N, Fok K, Lin H, Hou JJ, Dong G, Hung T, Chan KS, Ho JC. Wang F, et al. Nanotechnology. 2013 Sep 20;24(37):375202. doi: 10.1088/0957-4484/24/37/375202. Epub 2013 Aug 21. Nanotechnology. 2013. PMID: 23965340

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