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Results: 1 to 20 of 107

1.

Large area and depth-profiling dislocation imaging and strain analysis in Si/SiGe/Si heterostructures.

Chen X, Zuo D, Kim S, Mabon J, Sardela M, Wen J, Zuo JM.

Microsc Microanal. 2014 Oct;20(5):1521-7. doi: 10.1017/S1431927614012963. Epub 2014 Aug 27.

PMID:
25158752
[PubMed - in process]
2.

In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures.

Stach EA, Hull R, Bean JC, Jones KS, Nejim A.

Microsc Microanal. 1998 May;4(3):294-307.

PMID:
9767667
[PubMed - as supplied by publisher]
3.

Total reflection X-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure.

McNally PJ, Dilliway G, Bonar JM, Willoughby A, Tuomi T, Rantamäki R, Danilewsky AN, Lowney D.

J Xray Sci Technol. 2001 Jan 1;9(3):121-30.

PMID:
22388563
[PubMed]
4.

Size dependent anisotropic strain and optical properties of strained Si nanocrystals.

Dhara S, Giri PK.

J Nanosci Nanotechnol. 2011 Oct;11(10):9215-21.

PMID:
22400326
[PubMed]
5.

Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique.

Chen J, Yuan X, Sekiguchi T.

Scanning. 2008 Jul-Aug;30(4):347-53. doi: 10.1002/sca.20116.

PMID:
18615457
[PubMed]
6.

Characterization of SiGe thin films using a laboratory X-ray instrument.

Ulyanenkova T, Myronov M, Benediktovitch A, Mikhalychev A, Halpin J, Ulyanenkov A.

J Appl Crystallogr. 2013 Aug 1;46(Pt 4):898-902. Epub 2013 Jun 7.

PMID:
24046495
[PubMed]
Free PMC Article
7.

The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures.

Endres J, Daniš S, Bauer G.

J Phys Condens Matter. 2013 May 1;25(17):175802. doi: 10.1088/0953-8984/25/17/175802. Epub 2013 Apr 8. Erratum in: J Phys Condens Matter. 2013 Dec 11;25(49):499501.

PMID:
23567796
[PubMed]
8.

Strain analysis of misfit dislocations in α-Fe2O3/α-Al2O3 heterostructure interface by geometric phase analysis.

Wang Y, Liu XP, Qin GW.

Micron. 2014 Nov 11;69C:21-24. doi: 10.1016/j.micron.2014.11.001. [Epub ahead of print]

PMID:
25437852
[PubMed - as supplied by publisher]
9.

Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices.

Moldovan G, Kazemian P, Edwards PR, Ong VK, Kurniawan O, Humphreys CJ.

Ultramicroscopy. 2007 Apr-May;107(4-5):382-9. Epub 2006 Nov 7.

PMID:
17126490
[PubMed]
10.

New mechanism for dislocation blocking in strained layer epitaxial growth

Stach EA, Schwarz KW, Hull R, Ross FM, Tromp RM.

Phys Rev Lett. 2000 Jan 31;84(5):947-50.

PMID:
11017412
[PubMed - as supplied by publisher]
11.

Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM.

Wang D, Zou J, He WZ, Chen H, Li FH, Kawasaki K, Oikawa T.

Ultramicroscopy. 2004 Jan;98(2-4):259-64.

PMID:
15046806
[PubMed]
12.

Practical aspects of strain measurement in thin SiGe layers by (004) dark-field electron holography in Lorentz mode.

Denneulin T, Cooper D, Rouviere JL.

Micron. 2014 Jul;62:52-65. doi: 10.1016/j.micron.2014.02.017. Epub 2014 Mar 15.

PMID:
24811992
[PubMed - in process]
13.

Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space.

Hrauda N, Zhang JJ, Süess MJ, Wintersberger E, Holý V, Stangl J, Deiter C, Seeck OH, Bauer G.

Nanotechnology. 2012 Nov 23;23(46):465705. doi: 10.1088/0957-4484/23/46/465705. Epub 2012 Oct 23.

PMID:
23092941
[PubMed]
14.

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations.

Jallipalli A, Balakrishnan G, Huang Sh, Rotter T, Nunna K, Liang B, Dawson L, Huffaker D.

Nanoscale Res Lett. 2009 Aug 30;4(12):1458-62. doi: 10.1007/s11671-009-9420-9.

PMID:
20652143
[PubMed]
Free PMC Article
15.

Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si.

Vaudin MD, Osborn WA, Friedman LH, Gorham JM, Vartanian V, Cook RF.

Ultramicroscopy. 2015 Jan;148:94-104. doi: 10.1016/j.ultramic.2014.09.007. Epub 2014 Sep 30.

PMID:
25461586
[PubMed - in process]
16.

Growth of one-dimensional Si/SiGe heterostructures by thermal CVD.

Mouchet C, Latu-Romain L, Cayron C, Rouviere E, Celle C, Simonato JP.

Nanotechnology. 2008 Aug 20;19(33):335603. doi: 10.1088/0957-4484/19/33/335603. Epub 2008 Jul 7.

PMID:
21730625
[PubMed]
17.

EBIC study of electron generation function in a-Si:H.

Najar S, Equer B.

Microsc Res Tech. 1994 Aug 15;28(6):527-34.

PMID:
7949398
[PubMed - indexed for MEDLINE]
18.

Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications.

Sookchoo P, Sudradjat FF, Kiefer AM, Durmaz H, Paiella R, Lagally MG.

ACS Nano. 2013 Mar 26;7(3):2326-34. doi: 10.1021/nn305528t. Epub 2013 Feb 18.

PMID:
23402572
[PubMed]
19.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Liu Q, Zhao C, Su S, Li J, Xing Y, Cheng B.

PLoS One. 2013 Apr 23;8(4):e62672. doi: 10.1371/journal.pone.0062672. Print 2013.

PMID:
23626845
[PubMed - indexed for MEDLINE]
Free PMC Article
20.

Convergent beam electron diffraction extinction distance measurements for quantitative analysis of si(1-x),Ge(x).

Delille D, Pantel R, Vincent G, Van Cappellen E.

Ultramicroscopy. 2002 Oct;93(1):1-9.

PMID:
12380646
[PubMed]

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