Similar articles for PMID: 25102402

Year	Number of Results
2009	2
2010	3
2011	2
2012	4
2013	2
2014	12
2015	6
2016	12
2017	20
2018	14
2019	12
2020	7
2024	0

1

Resolving voltage-time dilemma using an atomic-scale lever of subpicosecond electron-phonon interaction.

Yang X, Tudosa I, Choi BJ, Chen AB, Chen IW. Yang X, et al. Nano Lett. 2014 Sep 10;14(9):5058-67. doi: 10.1021/nl501710r. Epub 2014 Aug 7. Nano Lett. 2014. PMID: 25102402

2

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

Hu W, Zou L, Chen X, Qin N, Li S, Bao D. Hu W, et al. ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5012-7. doi: 10.1021/am500048y. Epub 2014 Mar 25. ACS Appl Mater Interfaces. 2014. PMID: 24635893

3

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions.

Huang YJ, Chao SC, Lien DH, Wen CY, He JH, Lee SC. Huang YJ, et al. Sci Rep. 2016 Apr 7;6:23945. doi: 10.1038/srep23945. Sci Rep. 2016. PMID: 27052322 Free PMC article.

4

Enhanced Unipolar Resistive Switching Characteristics of Hf_0.5Zr_0.5O₂ Thin Films with High ON/OFF Ratio.

Wu Z, Zhu J. Wu Z, et al. Materials (Basel). 2017 Mar 22;10(3):322. doi: 10.3390/ma10030322. Materials (Basel). 2017. PMID: 28772685 Free PMC article.

5

Phototunable Biomemory Based on Light-Mediated Charge Trap.

Lv Z, Wang Y, Chen Z, Sun L, Wang J, Chen M, Xu Z, Liao Q, Zhou L, Chen X, Li J, Zhou K, Zhou Y, Zeng YJ, Han ST, Roy VAL. Lv Z, et al. Adv Sci (Weinh). 2018 Jun 25;5(9):1800714. doi: 10.1002/advs.201800714. eCollection 2018 Sep. Adv Sci (Weinh). 2018. PMID: 30250806 Free PMC article.

6

Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

Acharya SK, Nallagatla RV, Togibasa O, Lee BW, Liu C, Jung CU, Park BH, Park JY, Cho Y, Kim DW, Jo J, Kwon DH, Kim M, Hwang CS, Chae SC. Acharya SK, et al. ACS Appl Mater Interfaces. 2016 Mar;8(12):7902-11. doi: 10.1021/acsami.6b00647. Epub 2016 Mar 18. ACS Appl Mater Interfaces. 2016. PMID: 26955744

7

Ultrafast phase transition via catastrophic phonon collapse driven by plasmonic hot-electron injection.

Appavoo K, Wang B, Brady NF, Seo M, Nag J, Prasankumar RP, Hilton DJ, Pantelides ST, Haglund RF Jr. Appavoo K, et al. Nano Lett. 2014 Mar 12;14(3):1127-33. doi: 10.1021/nl4044828. Epub 2014 Jan 31. Nano Lett. 2014. PMID: 24484272

8

Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test.

Lu Y, Lee JH, Yang X, Chen IW. Lu Y, et al. Nanoscale. 2016 Oct 27;8(42):18113-18120. doi: 10.1039/c6nr06427b. Nanoscale. 2016. PMID: 27735005

9

A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition.

Xue W, Liu G, Zhong Z, Dai Y, Shang J, Liu Y, Yang H, Yi X, Tan H, Pan L, Gao S, Ding J, Xu XH, Li RW. Xue W, et al. Adv Mater. 2017 Oct;29(39). doi: 10.1002/adma.201702162. Epub 2017 Aug 21. Adv Mater. 2017. PMID: 28833612

10

Resistive switching and electrical control of ferromagnetism in a Ag/HfO₂/Nb:SrTiO₃/Ag resistive random access memory (RRAM) device at room temperature.

Ren S, Zhu G, Xie J, Bu J, Qin H, Hu J. Ren S, et al. J Phys Condens Matter. 2016 Feb 10;28(5):056001. doi: 10.1088/0953-8984/28/5/056001. Epub 2016 Jan 13. J Phys Condens Matter. 2016. PMID: 26761365

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