Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Results: 1 to 20 of 96

1.

Polarized photocurrent response in black phosphorus field-effect transistors.

Hong T, Chamlagain B, Lin W, Chuang HJ, Pan M, Zhou Z, Xu YQ.

Nanoscale. 2014 Aug 7;6(15):8978-83. doi: 10.1039/c4nr02164a.

PMID:
24967826
[PubMed - in process]
2.

Photothermoelectric effect in suspended semiconducting carbon nanotubes.

Deborde T, Aspitarte L, Sharf T, Kevek JW, Minot ED.

ACS Nano. 2014 Jan 28;8(1):216-21. doi: 10.1021/nn403137a. Epub 2013 Dec 23.

PMID:
24354300
[PubMed - in process]
3.

Gate-dependent carrier diffusion length in lead selenide quantum dot field-effect transistors.

Otto T, Miller C, Tolentino J, Liu Y, Law M, Yu D.

Nano Lett. 2013 Aug 14;13(8):3463-9. doi: 10.1021/nl401698z. Epub 2013 Jul 3.

PMID:
23802707
[PubMed]
4.

Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors.

Buscema M, Groenendijk DJ, Blanter SI, Steele GA, van der Zant HS, Castellanos-Gomez A.

Nano Lett. 2014 Jun 11;14(6):3347-52. doi: 10.1021/nl5008085. Epub 2014 May 13.

PMID:
24821381
[PubMed - in process]
5.

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating.

Buscema M, Groenendijk DJ, Steele GA, van der Zant HS, Castellanos-Gomez A.

Nat Commun. 2014 Aug 28;5:4651. doi: 10.1038/ncomms5651.

PMID:
25164986
[PubMed - in process]
6.

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors.

Cho K, Kim TY, Park W, Park J, Kim D, Jang J, Jeong H, Hong S, Lee T.

Nanotechnology. 2014 Apr 18;25(15):155201. doi: 10.1088/0957-4484/25/15/155201. Epub 2014 Mar 18.

PMID:
24642746
[PubMed - in process]
7.

Scanning photocurrent imaging and electronic band studies in silicon nanowire field effect transistors.

Ahn Y, Dunning J, Park J.

Nano Lett. 2005 Jul;5(7):1367-70.

PMID:
16178240
[PubMed - indexed for MEDLINE]
8.

Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

Xia F, Farmer DB, Lin YM, Avouris P.

Nano Lett. 2010 Feb 10;10(2):715-8. doi: 10.1021/nl9039636.

PMID:
20092332
[PubMed]
9.

Photocurrent imaging of p-n junctions in ambipolar carbon nanotube transistors.

Ahn YH, Tsen AW, Kim B, Park YW, Park J.

Nano Lett. 2007 Nov;7(11):3320-3. Epub 2007 Oct 16.

PMID:
17939725
[PubMed]
10.

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode.

Deng Y, Luo Z, Conrad NJ, Liu H, Gong Y, Najmaei S, Ajayan PM, Lou J, Xu X, Ye PD.

ACS Nano. 2014 Jul 17. [Epub ahead of print]

PMID:
25019534
[PubMed - as supplied by publisher]
11.

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus.

Qiao J, Kong X, Hu ZX, Yang F, Ji W.

Nat Commun. 2014 Jul 21;5:4475. doi: 10.1038/ncomms5475.

PMID:
25042376
[PubMed - in process]
Free PMC Article
12.

Imaging of photocurrent generation and collection in single-layer graphene.

Park J, Ahn YH, Ruiz-Vargas C.

Nano Lett. 2009 May;9(5):1742-6. doi: 10.1021/nl8029493.

PMID:
19326919
[PubMed]
13.

Large and tunable photothermoelectric effect in single-layer MoS2.

Buscema M, Barkelid M, Zwiller V, van der Zant HS, Steele GA, Castellanos-Gomez A.

Nano Lett. 2013 Feb 13;13(2):358-63. doi: 10.1021/nl303321g. Epub 2013 Jan 11.

PMID:
23301811
[PubMed]
14.

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

Yu C, Liu H, Ni W, Gao N, Zhao J, Zhang H.

Phys Chem Chem Phys. 2011 Feb 28;13(8):3461-7. doi: 10.1039/c0cp01026j. Epub 2011 Jan 14.

PMID:
21240394
[PubMed]
15.

Black phosphorus field-effect transistors.

Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y.

Nat Nanotechnol. 2014 May;9(5):372-7. doi: 10.1038/nnano.2014.35. Epub 2014 Mar 2.

PMID:
24584274
[PubMed - in process]
16.

Improved performance of graphene transistors by strain engineering.

Nguyen VH, Nguyen HV, Dollfus P.

Nanotechnology. 2014 Apr 25;25(16):165201. doi: 10.1088/0957-4484/25/16/165201. Epub 2014 Mar 26.

PMID:
24670679
[PubMed - in process]
17.

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

Gu W, Shen J, Ma X.

Nanoscale Res Lett. 2014 Feb 28;9(1):100. doi: 10.1186/1556-276X-9-100.

PMID:
24576344
[PubMed]
Free PMC Article
18.

Photocurrent enhancement of n-type Cu2O electrodes achieved by controlling dendritic branching growth.

McShane CM, Choi KS.

J Am Chem Soc. 2009 Feb 25;131(7):2561-9. doi: 10.1021/ja806370s.

PMID:
19199616
[PubMed]
19.

Electrical properties of 10-nm-radius n-type gate all around twin Si nanowire field effect transistors.

Jang SH, Ryu JT, You JH, Kim TW.

J Nanosci Nanotechnol. 2012 Jul;12(7):5839-42.

PMID:
22966666
[PubMed]
20.

Single ZnO nanowire based high-performance field effect transistors (FETs).

Park YK, Umar A, Kim JS, Yang HY, Lee JS, Hahn YB.

J Nanosci Nanotechnol. 2009 Oct;9(10):5839-44.

PMID:
19908462
[PubMed]

Display Settings:

Format
Items per page
Sort by

Send to:

Choose Destination

Supplemental Content

Write to the Help Desk