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Items: 1 to 20 of 83

1.

Atom probe tomography study of Mg-doped GaN layers.

Khromov S, Gregorius D, Schiller R, Lösch J, Wahl M, Kopnarski M, Amano H, Monemar B, Hultman L, Pozina G.

Nanotechnology. 2014 Jul 11;25(27):275701. doi: 10.1088/0957-4484/25/27/275701. Epub 2014 Jun 24.

PMID:
24960447
2.

Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice.

Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA.

Ultramicroscopy. 2011 Feb;111(3):207-11. doi: 10.1016/j.ultramic.2010.11.028. Epub 2010 Dec 1.

PMID:
21333858
3.

Structure investigations of nonpolar GaN layers.

Neumann W, Mogilatenko A, Wernicke T, Richter E, Weyers M, Kneissl M.

J Microsc. 2010 Mar;237(3):308-13. doi: 10.1111/j.1365-2818.2009.03249.x.

4.

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching.

Son JS, Honda Y, Amano H.

Opt Express. 2014 Feb 10;22(3):3585-92. doi: 10.1364/OE.22.003585.

PMID:
24663649
5.

Formation of aligned CrN nanoclusters in Cr-delta-doped GaN.

Zhou YK, Kimura S, Emura S, Hasegawa S, Asahi H.

J Phys Condens Matter. 2009 Feb 11;21(6):064216. doi: 10.1088/0953-8984/21/6/064216. Epub 2009 Jan 20.

PMID:
21715918
6.

Coaxial In(x)Ga(1-x)N/GaN multiple quantum well nanowire arrays on Si(111) substrate for high-performance light-emitting diodes.

Ra YH, Navamathavan R, Park JH, Lee CR.

Nano Lett. 2013 Aug 14;13(8):3506-16. doi: 10.1021/nl400906r. Epub 2013 May 28.

PMID:
23701263
7.

Comparative Raman and HRTEM study of nanostructured GaN nucleation layers and device layers on sapphire (0001).

Pant P, Narayan J, Wushuer A, Manghnani MH.

J Nanosci Nanotechnol. 2008 Nov;8(11):5985-92.

PMID:
19198336
8.

Atomic insight into Ge₁₋xSnx using atom probe tomography.

Kumar A, Komalan MP, Lenka H, Kambham AK, Gilbert M, Gencarelli F, Vincent B, Vandervorst W.

Ultramicroscopy. 2013 Sep;132:171-8. doi: 10.1016/j.ultramic.2013.02.009. Epub 2013 Feb 21.

PMID:
23498554
9.

Nanometer-size cluster formation in alkali-metal-doped fullerene layers.

Touzik A, Hermann H, Wetzig K.

J Chem Phys. 2004 Apr 15;120(15):7131-5.

PMID:
15267617
10.

Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers.

Teukam Z, Chevallier J, Saguy C, Kalish R, Ballutaud D, Barbé M, Jomard F, Tromson-Carli A, Cytermann C, Butler JE, Bernard M, Baron C, Deneuville A.

Nat Mater. 2003 Jul;2(7):482-6.

PMID:
12876564
11.

Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire.

Oliver RA.

Ultramicroscopy. 2010 Dec;111(1):73-8. doi: 10.1016/j.ultramic.2010.10.008. Epub 2010 Oct 20.

PMID:
21115277
12.

High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

Horng RH, Shen KC, Yin CY, Huang CY, Wuu DS.

Opt Express. 2013 Jun 17;21(12):14452-7. doi: 10.1364/OE.21.014452.

PMID:
23787632
13.

Spiral growth and formation of stacking faults and vacancy islands during molecular beam epitaxy of InN on GaN(0001).

Liu Y, Li L.

Nanotechnology. 2011 Oct 21;22(42):425707. doi: 10.1088/0957-4484/22/42/425707. Epub 2011 Sep 23.

PMID:
21941037
14.

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Wang Z, Huang B, Yu L, Dai Y, Wang P, Qin X, Zhang X, Wei J, Zhan J, Jing X, Liu H, Whangbo MH.

J Am Chem Soc. 2008 Dec 3;130(48):16366-73. doi: 10.1021/ja807030v.

PMID:
19006388
15.

Evidence of superparamagnetic co clusters in pulsed laser deposition-grown Zn0.9Co0.1O thin films using atom probe tomography.

Lardé R, Talbot E, Pareige P, Bieber H, Schmerber G, Colis S, Pierron-Bohnes V, Dinia A.

J Am Chem Soc. 2011 Feb 9;133(5):1451-8. doi: 10.1021/ja108290u. Epub 2011 Jan 5.

PMID:
21207962
16.

Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.

Shih CH, Huang TH, Schuber R, Chen YL, Chang L, Lo I, Chou MM, Schaadt DM.

Nanoscale Res Lett. 2011 Jun 15;6(1):425. doi: 10.1186/1556-276X-6-425.

17.

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

Wilkins SJ, Greenough M, Arellano C, Paskova T, Ivanisevic A.

Langmuir. 2014 Mar 4;30(8):2038-46. doi: 10.1021/la404511b. Epub 2014 Feb 18.

PMID:
24502420
18.

Doping of Si into GaN nanowires and optical properties of resulting composites.

Xu C, Chung S, Kim M, Kim DE, Chon B, Hong S, Joo T.

J Nanosci Nanotechnol. 2005 Apr;5(4):530-5.

PMID:
16004115
19.

Influence of Mg doping on GaN nanowires.

Zhang D, Xue C, Zhuang H, Sun H, Cao Y, Huang Y, Wang Z, Wang Y.

Chemphyschem. 2009 Feb 23;10(3):571-5. doi: 10.1002/cphc.200800529.

PMID:
19142926
20.

Effects of free carriers on piezoelectric nanogenerators and piezotronic devices made of GaN nanowire arrays.

Wang CH, Liao WS, Ku NJ, Li YC, Chen YC, Tu LW, Liu CP.

Small. 2014 Nov;10(22):4718-25. doi: 10.1002/smll.201400768. Epub 2014 Jul 10.

PMID:
25044675
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