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Items: 1 to 20 of 152

1.

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes.

Zhang ZH, Liu W, Tan ST, Ju Z, Ji Y, Kyaw Z, Zhang X, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 May 5;22 Suppl 3:A779-89. doi: 10.1364/OE.22.00A779.

PMID:
24922385
2.

GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.

Chang HM, Lai WC, Chen WS, Chang SJ.

Opt Express. 2015 Apr 6;23(7):A337-45. doi: 10.1364/OE.23.00A337.

PMID:
25968799
3.

Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.

Song H, Kim JS, Kim EK, Seo YG, Hwang SM.

Nanotechnology. 2010 Apr 2;21(13):134026. doi: 10.1088/0957-4484/21/13/134026. Epub 2010 Mar 8.

PMID:
20208099
4.

Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes.

Peng D, Tan C, Chen Z, Feng Z.

J Nanosci Nanotechnol. 2015 Jun;15(6):4604-7.

PMID:
26369087
5.

A PN-type quantum barrier for InGaN/GaN light emitting diodes.

Zhang ZH, Tan ST, Ji Y, Liu W, Ju Z, Kyaw Z, Sun XW, Demir HV.

Opt Express. 2013 Jul 1;21(13):15676-85. doi: 10.1364/OE.21.015676.

PMID:
23842353
6.

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

Zhang ZH, Ju Z, Liu W, Tan ST, Ji Y, Kyaw Z, Zhang X, Hasanov N, Sun XW, Demir HV.

Opt Lett. 2014 Apr 15;39(8):2483-6. doi: 10.1364/OL.39.002483.

PMID:
24979024
7.

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers.

Lee KJ, Kim SJ, Kim JJ, Hwang K, Kim ST, Park SJ.

Opt Express. 2014 Jun 30;22 Suppl 4:A1164-73. doi: 10.1364/OE.22.0A1164.

PMID:
24978079
8.

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.

Opt Express. 2014 Jan 13;22(1):809-16. doi: 10.1364/OE.22.000809.

PMID:
24515040
9.

Enhanced optical output power by the silver localized surface plasmon coupling through side facets of micro-hole patterned InGaN/GaN light-emitting diodes.

Lee KJ, Kim SH, Park AH, Lee SB, Lee GH, Yang GM, Pham HD, Thu HT, Cuong TV, Suh EK.

Opt Express. 2014 Jun 30;22 Suppl 4:A1051-8. doi: 10.1364/OE.22.0A1051.

PMID:
24978068
10.

InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.

Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR.

Nano Lett. 2012 Jun 13;12(6):3257-62. doi: 10.1021/nl301307a. Epub 2012 May 24.

PMID:
22587013
11.

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields.

Park H, Kim BJ, Kim J.

Opt Express. 2012 Nov 5;20(23):25249-54. doi: 10.1364/OE.20.025249.

PMID:
23187341
12.
13.

Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier.

Ji Y, Zhang ZH, Tan ST, Ju ZG, Kyaw Z, Hasanov N, Liu W, Sun XW, Demir HV.

Opt Lett. 2013 Jan 15;38(2):202-4. doi: 10.1364/OL.38.000202.

PMID:
23454962
14.

Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.

Gu GH, Jang DH, Nam KB, Park CG.

Microsc Microanal. 2013 Aug;19 Suppl 5:99-104. doi: 10.1017/S1431927613012427.

PMID:
23920184
15.

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z.

Nano Lett. 2012 Mar 14;12(3):1317-23. doi: 10.1021/nl203860b. Epub 2012 Feb 2.

PMID:
22283508
16.

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.

Jung BO, Bae SY, Lee S, Kim SY, Lee JY, Honda Y, Amano H.

Nanoscale Res Lett. 2016 Dec;11(1):215. doi: 10.1186/s11671-016-1441-6. Epub 2016 Apr 22.

17.

Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.

Smith R, Liu B, Bai J, Wang T.

Nano Lett. 2013 Jul 10;13(7):3042-7. doi: 10.1021/nl400597d. Epub 2013 Jun 26.

PMID:
23795609
18.
19.
20.

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

Lu T, Li S, Zhang K, Liu C, Yin Y, Wu L, Wang H, Yang X, Xiao G, Zhou Y.

Opt Express. 2011 Sep 12;19(19):18319-23. doi: 10.1364/OE.19.018319.

PMID:
21935200
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