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Results: 1 to 20 of 125

1.

Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.

Van NH, Lee JH, Sohn JI, Cha S, Whang D, Kim JM, Kang DJ.

Nanotechnology. 2014 May 23;25(20):205201. doi: 10.1088/0957-4484/25/20/205201. Epub 2014 Apr 30.

PMID:
24784161
[PubMed - in process]
2.

Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals.

Kang SJ, Bae I, Shin YJ, Park YJ, Huh J, Park SM, Kim HC, Park C.

Nano Lett. 2011 Jan 12;11(1):138-44. doi: 10.1021/nl103094e. Epub 2010 Nov 29.

PMID:
21114332
[PubMed]
3.

Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

Hwang SK, Min SY, Bae I, Cho SM, Kim KL, Lee TW, Park C.

Small. 2014 May 28;10(10):1976-84. doi: 10.1002/smll.201303814. Epub 2014 Mar 18.

PMID:
24644019
[PubMed - in process]
4.

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

Van NH, Lee JH, Sohn JI, Cha SN, Whang D, Kim JM, Kang DJ.

Nanoscale. 2014 May 21;6(10):5479-83. doi: 10.1039/c3nr06690h.

PMID:
24727896
[PubMed - in process]
5.

Chemically cross-linked thin poly(vinylidene fluoride-co-trifluoroethylene)films for nonvolatile ferroelectric polymer memory.

Shin YJ, Kang SJ, Jung HJ, Park YJ, Bae I, Choi DH, Park C.

ACS Appl Mater Interfaces. 2011 Feb;3(2):582-9. doi: 10.1021/am1011657. Epub 2011 Feb 8.

PMID:
21302914
[PubMed]
6.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Sohn JI, Choi SS, Morris SM, Bendall JS, Coles HJ, Hong WK, Jo G, Lee T, Welland ME.

Nano Lett. 2010 Nov 10;10(11):4316-20. doi: 10.1021/nl1013713.

PMID:
20945844
[PubMed - indexed for MEDLINE]
7.

A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube.

Son JY, Ryu S, Park YC, Lim YT, Shin YS, Shin YH, Jang HM.

ACS Nano. 2010 Dec 28;4(12):7315-20. doi: 10.1021/nn1021296. Epub 2010 Nov 4.

PMID:
21050014
[PubMed]
8.

Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications.

Liao L, Fan HJ, Yan B, Zhang Z, Chen LL, Li BS, Xing GZ, Shen ZX, Wu T, Sun XW, Wang J, Yu T.

ACS Nano. 2009 Mar 24;3(3):700-6. doi: 10.1021/nn800808s.

PMID:
19249845
[PubMed]
9.

Solution-Processable Low-Voltage and Flexible Floating-Gate Memories Based on an n-Type Polymer Semiconductor and High-k Polymer Gate Dielectrics.

Li J, Yan F.

ACS Appl Mater Interfaces. 2014 Aug 13;6(15):12815-20. doi: 10.1021/am5028007. Epub 2014 Jul 25.

PMID:
25026221
[PubMed - in process]
10.

Thermal-dependent nonvolatile memory characteristics based on organic ferroelectric field-effect transistor.

Kim WH, Choi Y, Bae JH.

J Nanosci Nanotechnol. 2013 Oct;13(10):7080-2.

PMID:
24245196
[PubMed]
11.

Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory.

Yeh MS, Wu YC, Hung MF, Liu KC, Jhan YR, Chen LC, Chang CY.

Nanoscale Res Lett. 2013 Jul 22;8(1):331. doi: 10.1186/1556-276X-8-331.

PMID:
23875863
[PubMed]
Free PMC Article
12.

Retention characteristics of Schottky barrier tunneling transistor-nano floating gate memory with various side walls.

Won S, Son D, Kim E, Kim J, Lee K, Park K.

J Nanosci Nanotechnol. 2011 Jan;11(1):314-7.

PMID:
21446446
[PubMed]
13.

Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes.

Fu WY, Xu Z, Liu L, Bai XD, Wang EG.

Nanotechnology. 2009 Nov 25;20(47):475305. doi: 10.1088/0957-4484/20/47/475305. Epub 2009 Oct 29.

PMID:
19875879
[PubMed]
14.

High-k polymer-graphene oxide dielectrics for low-voltage flexible nonvolatile transistor memory devices.

Chou YH, Chiu YC, Chen WC.

Chem Commun (Camb). 2014 Mar 25;50(24):3217-9. doi: 10.1039/c3cc49211g. Epub 2014 Feb 13.

PMID:
24522655
[PubMed - in process]
15.

Organic field-effect transistor memory devices using discrete ferritin nanoparticle-based gate dielectrics.

Kim BJ, Ko Y, Cho JH, Cho J.

Small. 2013 Nov 25;9(22):3784-91. doi: 10.1002/smll.201300522. Epub 2013 May 10.

PMID:
23666682
[PubMed]
16.

Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

Wu D, Jiang Y, Yu Y, Zhang Y, Li G, Zhu Z, Wu C, Wang L, Luo L, Jie J.

Nanotechnology. 2012 Dec 7;23(48):485203. doi: 10.1088/0957-4484/23/48/485203. Epub 2012 Nov 9.

PMID:
23138192
[PubMed]
17.
18.

Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.

Yoon C, Jeon Y, Yun J, Kim S.

J Nanosci Nanotechnol. 2012 Jan;12(1):578-84.

PMID:
22524023
[PubMed - indexed for MEDLINE]
19.

High-performance nonvolatile Al/AlO(x)/CdTe:Sb nanowire memory device.

Xie C, Nie B, Zhu L, Zeng LH, Yu YQ, Wang XH, Fang QL, Luo LB, Wu YC.

Nanotechnology. 2013 Sep 6;24(35):355203. doi: 10.1088/0957-4484/24/35/355203. Epub 2013 Aug 7.

PMID:
23924708
[PubMed]
20.

Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends.

Bae I, Hwang SK, Kim RH, Kang SJ, Park C.

ACS Appl Mater Interfaces. 2013 Nov 13;5(21):10696-704. doi: 10.1021/am402852y. Epub 2013 Oct 22.

PMID:
24070419
[PubMed]

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